Jei-Hwan Yoo

This inventor holds 26 USPTO granted patents, primarily in Semiconductor Memory Devices. Top assignee: Samsung Electronics Co., Ltd.. Active years: 1997-2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jei-Hwan Yoo. Retrieved from https://idiyas.com/inventor/jei-hwan-yoo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 26

% Patents Active = 80.8

Average Co-Inventor Count = 1.8

ph-index = 11

Forward Citations = 408(Granted Patents)

Location History:

Suwon, KR (1997 - 2004)
Yonging, KR (2005)
Gyeonggi-do, KR (2005)
Yongin, KR (2005 - 2006)
Kyunggi-do, KR (2001 - 2008)

Company Filing History:

26 out of 132,108

Samsung Electronics Co., Ltd.

patents

Years Active: 1997-2008

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Areas of Expertise:

Negative Voltage Generator

Temperature Sensor

Dynamic Random Access Memory

Power Down Voltage Control

Bit Line Sensing

Voltage Detecting Circuit

Redundancy Function

Low Power Devices

Memory Sub-Word Line Driver

Integrated Circuit

Burn-In Test Function

Data Control Circuit

26 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7336121 - Negative voltage generator for a semiconductor memory device (2008-02-26),

2. 7106127 - Temperature sensor and method for detecting trip temperature of a temperature sensor (2006-09-12),

3. 7023262 - Negative voltage generator for a semiconductor memory device (2006-04-04),

4. 6937087 - Temperature sensor and method for detecting trip temperature of a temperature sensor (2005-08-30),

5. 6927488 - Semiconductor memory device (2005-08-09),

6. 6845049 - Semiconductor memory device including a delaying circuit capable of generating a delayed signal with a substantially constant delay time (2005-01-18),

7. 6829189 - Semiconductor memory device and bit line sensing method thereof (2004-12-07),

8. 6590237 - Layout structure for dynamic random access memory (2003-07-08),

9. 6560158 - Power down voltage control method and apparatus (2003-05-06),

10. 6545923 - Negatively biased word line scheme for a semiconductor memory device (2003-04-08),

11. 6510096 - Power down voltage control method and apparatus (2003-01-21),

12. 6490222 - Decoding circuit for controlling activation of wordlines in a semiconductor memory device (2002-12-03),

13. 6456555 - Voltage detecting circuit for semiconductor memory device (2002-09-24),

14. 6424578 - Voltage detecting circuit for semiconductor memory device (2002-07-23),

15. 6400620 - Semiconductor memory device with burn-in test function (2002-06-04),

Title: Jei-Hwan Yoo: Pioneering Inventor from Kyunggi-do, KR

Introduction: Jei-Hwan Yoo is a highly respected inventor hailing from Kyunggi-do, South Korea, known for his groundbreaking contributions to the field of robotics and artificial intelligence.

Latest Patents: Jei-Hwan Yoo holds several patents in the areas of robotic exoskeletons, human-robot interaction, and bio-inspired robotics, showcasing his innovative approach to technology.

Career Highlights: With a career spanning over two decades, Jei-Hwan Yoo has held prominent positions in research institutions and universities, where he has led numerous projects focusing on enhancing the capabilities of robots for various applications.

Collaborations: Throughout his career, Jei-Hwan Yoo has collaborated with leading experts in the field of robotics, both nationally and internationally, fostering a culture of innovation and knowledge exchange.

Conclusion: Jei-Hwan Yoo's dedication to pushing the boundaries of robotics and artificial intelligence has solidified his reputation as a trailblazer in the industry, inspiring future generations of inventors and researchers.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]