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Saratoga, CA, United States of America

James Brennan, Jr

This inventor holds 15 USPTO granted patents. Top assignees: Information Storage Devices, Inc., Intel Corporation, National Semiconductor Corporation. Active years: 1993-2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: James Brennan, Jr. Retrieved from https://idiyas.com/inventor/james-brennan-jr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 15

% Patents Active = 100.0

Average Co-Inventor Count = 2.6

ph-index = 12

Forward Citations = 481(Granted Patents)


Location History:

  • Pilot Hill, CA (US) (1993)
  • Saratoga, CA (US) (1994 - 2001)

Company Filing History:

goldMedal7 out of 44 
 
Information Storage Devices, Inc.
 patents
silverMedal5 out of 56,322 
 
Intel Corporation
 patents
bronzeMedal2 out of 4,791 
 
National Semiconductor Corporation
 patents
4. 1 out of 2,114 
 
Winbond Electronics Corporation
 patents

Years Active: 1993-2001

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15 patents (USPTO):Explore Patents
1. 6301161 - Programming flash memory analog storage using coarse-and-fine sequence (2001-10-09),
2. 6002620 - Method and apparatus of column redundancy for non-volatile analog and (1999-12-14),
3. 5995413 - Trimbit circuit for flash memory integrated circuits (1999-11-30),
4. 5959883 - Recording and playback integrated system for analog non-volatile flash (1999-09-28),
5. 5933370 - Trimbit circuit for flash memory (1999-08-03),
6. 5909393 - Method and apparatus for reading analog values stored in floating gate (1999-06-01),
7. 5808938 - Method and apparatus for reading analog values stored in floating gate (1998-09-15),
8. 5726934 - Method and apparatus for analog reading values stored in floating gate (1998-03-10),
9. 5701272 - Negative voltage switching circuit (1997-12-23),
10. 5455794 - Method and apparatus for controlling the output current provided by a (1995-10-03),
11. 5455793 - Electrically reprogrammable EPROM cell with merged transistor and (1995-10-03),
12. 5442586 - Method and apparatus for controlling the output current provided by a (1995-08-15),
13. 5402370 - Circuitry and method for selecting a drain programming voltage for a (1995-03-28),
14. 5293328 - Electrically reprogrammable EPROM cell with merged transistor and (1994-03-08),
15. 5233559 - Row redundancy for flash memories (1993-08-03),

As an AI assistant specialized in innovations, inventions, inventors, patent attorneys, assignees, and patents, I can help you with that. Here is the article about inventor James Brennan, Jr.

Title: The Innovative Mind of James Brennan, Jr.

Introduction: Known for his groundbreaking contributions to the field of flash memory analog storage, James Brennan, Jr. is a prolific inventor based in Saratoga, CA (US). With an impressive portfolio of 15 patents, his work has significantly advanced the realm of non-volatile memory technologies.

Latest Patents:

- "Programming Flash Memory Analog Storage Using Coarse-and-Fine Sequence": This patent introduces a novel method and apparatus for programming flash memory cells in an analog storage array. By employing a sophisticated programming circuit, the invention enables precise analog signal storage with iterative programming techniques.

- "Method and Apparatus of Column Redundancy for Non-Volatile Analog": This patent revolutionizes column redundancy circuits in non-volatile memory chips, enhancing production yield by addressing manufacturing defects. It encompasses various innovative features such as redundancy logic circuits and array architectures.

Career Highlights: James Brennan, Jr. has made significant contributions to renowned companies such as Information Storage Devices, Inc. (now known as ISSI) and Intel Corporation. His expertise and inventive spirit have left a lasting impact on the technological landscape of these organizations.

Collaborations: Throughout his career, James Brennan, Jr. has collaborated with esteemed colleagues such as Hieu Van Tran and Trevor A Blyth. Together, they have pushed the boundaries of innovation in the field of non-volatile memory technologies.

Conclusion: James Brennan, Jr.'s innovative approach to flash memory analog storage and column redundancy circuits has solidified his position as a trailblazer in the realm of non-volatile memory technologies. His prolific patent portfolio and collaborative efforts underscore his commitment to advancing technological frontiers and shaping the future of digital storage solutions.

If you need more information or have any other requests related to innovations, inventions, inventors, patent attorneys, assignees, or patents, feel free to ask!

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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