The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 1999
Filed:
Jul. 01, 1997
Hieu Van Tran, San Jose, CA (US);
James Brennan, Jr, Saratoga, CA (US);
Trevor Blyth, Sandy, UT (US);
Sukyoon Yoon, Saratoga, CA (US);
Information Storage Devices, Inc., San Jose, CA (US);
Abstract
This invention utilizes the small cell size of the NAND storage cell structure in an analog storage and playback device. This is achieved, in part, by using a special, zero current storage cell, in which in the read mode, the cell loading current is waveshaped to attain an optimal dynamic range and to avoid the resistive effects of series parasitic resistances of other transistors in the source node or drain node, and to avoid the transistor conductance variations of all the transistors in the read path. The loading current is waveshaped to reduce possible overshoot and settling effects to achieve the fine output voltage resolution in an optimal sensing time. Details of the method and alternate embodiments are disclosed.