Ionut Radu

This inventor holds 45 USPTO granted patents and 14 published patent applications and 11 EPO patents, primarily in Semiconductor Structures. Top assignees: Soitec, Commissariat a L'energie Atomique Et Aux Energies Alternatives. Active years: 2012-2026.

USPTO Granted Patents = 45 (Patent Applications = 14)

% Patents Active = 93.3

EPO Patents = 11 (Patent Applications = 23)

Average Co-Inventor Count = 2.9

ph-index = 6

Forward Citations = 536(Granted Patents)

Company Filing History:

Commissariat a L'energie Atomique Et Aux Energies Alternatives

patents

where one patent can have more than one assignee

Years Active: 2012-2026

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Areas of Expertise:

Composite Structure

Heterostructure

Surface Acoustic Wave Device

Semiconductor Fabrication

Monocrystalline SiC

Temperature-Compensated Devices

Radiofrequency Applications

Mechanical Separation

Thin Layers

Transistor Structures

3D Integration

Bonding Processes

45 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12603629 - Composite structure and associated production method (2026-04-14),

2. 12598923 - Method for producing a semiconductor structure comprising an interface region including agglomerates (2026-04-07),

3. 12588250 - NCFET transistor comprising a semiconductor-on-insulator substrate (2026-03-24),

4. 12320031 - Method for manufacturing a composite structure comprising a thin layer made of monocrystalline SiC on a carrier substrate made of SiC (2025-06-03),

5. 12316298 - Surface acoustic wave device including transducer in dielectric between a piezoelectric material and a substrate (2025-05-27),

6. 12198983 - Method for producing a composite structure comprising a thin layer of monocrystalline sic on a carrier substrate of polycrystalline SiC (2025-01-14),

7. 12165900 - Method of mechanical separation for a double layer transfer (2024-12-10),

8. 12143093 - Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device (2024-11-12),

9. 12101080 - Heterostructure and method of fabrication (2024-09-24),

10. 11923239 - Structures for radiofrequency applications and related methods (2024-03-05),

11. 11742233 - Method of mechanical separation for a double layer transfer (2023-08-29),

12. 11711065 - Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device (2023-07-25),

13. 11652464 - Surface acoustic wave device and associated production method (2023-05-16),

14. 11637542 - Heterostructure and method of fabrication (2023-04-25),

15. 11600766 - Method for manufacturing a monocrystalline piezoelectric layer (2023-03-07),

Title: Ionut Radu - Innovative Inventor from Crolles, FR

Introduction: Ionut Radu is a talented inventor based in Crolles, France, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Ionut Radu holds several patents in the areas of semiconductor technology, nanotechnology, and renewable energy solutions, showcasing his diverse range of expertise and creativity.

Career Highlights: With a background in engineering and a passion for pushing the boundaries of what is possible, Ionut Radu has had a successful career marked by numerous achievements in developing cutting-edge technologies that have the potential to shape the future.

Collaborations: Ionut Radu has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life, demonstrating his ability to work effectively in multidisciplinary teams to drive innovation forward.

Conclusion: Ionut Radu's innovative spirit, coupled with his technical acumen and collaborative approach, positions him as a key figure in the world of inventions and technological advancements.