The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2023
Filed:
Jan. 04, 2021
Applicant:
Soitec, Bernin, FR;
Inventors:
Marcel Broekaart, Theys, FR;
Thierry Barge, Chevrieres, FR;
Pascal Guenard, Froges, FR;
Ionut Radu, Crolles, FR;
Eric Desbonnets, Lumbin, FR;
Oleg Kononchuk, Theys, FR;
Assignee:
Soitec, Bernin, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
A61B 5/1459 (2006.01); A61B 5/00 (2006.01); A61B 5/145 (2006.01); H03H 9/02 (2006.01); H03H 3/02 (2006.01); H10N 30/072 (2023.01); H10N 30/87 (2023.01); H10N 39/00 (2023.01); H03H 3/04 (2006.01); H03H 3/10 (2006.01); H03H 9/13 (2006.01); H03H 9/145 (2006.01); H03H 9/17 (2006.01); H03H 9/25 (2006.01); H03H 9/56 (2006.01); H03H 9/64 (2006.01); H10N 30/085 (2023.01);
U.S. Cl.
CPC ...
H03H 9/02834 (2013.01); A61B 5/1459 (2013.01); A61B 5/14546 (2013.01); A61B 5/685 (2013.01); H03H 3/02 (2013.01); H03H 3/04 (2013.01); H03H 3/10 (2013.01); H03H 9/02102 (2013.01); H03H 9/02574 (2013.01); H03H 9/13 (2013.01); H03H 9/145 (2013.01); H03H 9/17 (2013.01); H03H 9/25 (2013.01); H03H 9/56 (2013.01); H03H 9/6489 (2013.01); H10N 30/072 (2023.02); H10N 30/87 (2023.02); H10N 39/00 (2023.02); A61B 2562/0204 (2013.01); H03H 2003/0407 (2013.01); H10N 30/085 (2023.02);
Abstract
A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.