Grenoble, France

Oleg Kononchuk

This inventor holds 72 USPTO granted patents and 26 published patent applications and 36 EPO patents, primarily in Semiconductor Technology (CPC class H01L). Top assignees: Soitec, S.o.i.tec Silicon on Insulator Technologies, Commissariat a L'energie Atomique Et Aux Energies Alternatives. Active years: 2008-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Oleg Kononchuk. Retrieved from https://idiyas.com/inventor/oleg-kononchuk

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 72 

% Patents Active = 98.6

 

Average Co-Inventor Count = 2.6

ph-index = 4

Forward Citations = 98(Granted Patents)

Forward Citations (Not Self Cited) = 78(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Grenoble, FR (2008 - 2021)
  • Theys, FR (2011 - 2024)

Company Filing History:


Years Active: 2008-2026

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Areas of Expertise:
Semiconductor-on-Insulator
Radiofrequency Applications
Surface Acoustic Wave
Thin Layer Transfer
Temperature-Compensated Substrate
Hybrid Structure
Wafer Assembly Fracturing
Single Crystal Material
Imager Substrates
Carrier Substrate
Smoothing Process
Contaminant Trapping
72 patents (USPTO):Explore Patents

Title: Oleg Kononchuk: Innovator in Semiconductor Technologies

Introduction

Oleg Kononchuk, a renowned inventor based in Grenoble, France, holds an impressive portfolio of 66 patents. His work primarily focuses on advancements in semiconductor technologies, showcasing a commitment to innovation and excellence in the field.

Latest Patents

Among his recent contributions to technology are two notable patents. The first is a "Semiconductor on Insulator Structure for a Front Side Type Imager." This invention introduces a semiconductor on insulator type structure utilized for front side imaging. It consists of a rear support substrate, an electrically insulating layer, and an active layer made from a monocrystalline semiconductor material. The design addresses mechanical stress between the active layer and support substrate, incorporating a silicon oxide layer to counteract bowing induced during cooling.

The second patent is a "Substrate for a Temperature-Compensated Surface Acoustic Wave Device or Volume Acoustic Wave Device." This substrate comprises a support structure and a piezoelectric layer, carefully designed to align the coefficients of thermal expansion for optimal performance. The semiconductor layer's positioning enhances the functionality of both surface and bulk acoustic wave devices.

Career Highlights

Oleg Kononchuk has significantly impacted the semiconductor industry through his tenure at leading companies. He has worked with Soitec, a global leader in semiconductor materials, and S.O.I.tec Silicon on Insulator Technologies, where he further honed his expertise in innovative semiconductor solutions.

Collaborations

Throughout his career, Oleg has collaborated with notable individuals in the field, including Didier Landru and Eric Desbonnets. These partnerships have fostered a rich environment for knowledge exchange and innovation, contributing to the development of groundbreaking semiconductor technologies.

Conclusion

Oleg Kononchuk exemplifies the spirit of innovation in semiconductor technologies, with a notable track record of patents that push the boundaries of what is possible. His collaborative efforts and strategic roles in esteemed companies underscore his dedication to advancing the field, making a significant mark in the world of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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