Soitec

S.o.i.tec Silicon on Insulator Technologies

Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Centre National De La Recherche Scientifique

Stmicroelectronics (crolles 2) Sas

Soited

Applied Materials, Inc.

Stmicroelectronics (rousset) Sas

Universite Claude Bernard – Lyon1

S.o.i. Tec Silicon on Insulator Technologies, S.a.

Oleg Kononchuk

Didier Landru

Nadia Ben Mohamed

Eric Desbonnets

Ionut Radu

Walter Schwarzenbach

Ludovic Ecarnot

Marcel Broekaart

Thierry Barge

Christophe Figuet

Pascal Guenard

François Rieutord

Fabrice Letertre

Eric Neyret

Patrick Reynaud

Frédéric Mazen

Jean-Pierre Raskin

Christelle Veytizou

Luciana Capello

Shay Reboh

Jean-Marc Bethoux

Arnaud Castex

Frederic Mazen

Eric Guiot

Carole David

Francois Rieutord

Christophe Maleville

Didier Dutartre

Frank Fournel

Daniel Delprat

Frédéric Allibert

George K Celler

Konstantin Bourdelle

Gweltaz Gaudin

Isabelle Bertrand

Djamel Belhachemi

Damien Massy

Christelle Michau

Christophe Gourdel

Fabrice Gritti

Michael Stinco

William Van Den Daele

David Sotta

Yann Sinquin

Alexandra Abbadie

Isabelle Huyet

Eric Butaud

Robert Langer

Xavier Schneider

Sebastien Mougel

Norbert Colombet

Helen Grampeix

Jean-Michel Hartmann

Sébastien Simon

Marianne Coig

Franck Colas

Rénald Guerin

Eric Desbonnet

Taguhi Yeghoyan

Véronique Souliere

Gabriel Ferro

Kassam Alassaad

Youngpil Kim

Chee Hoe Wong

Raphaël Caulmilone

Zang Keyan

Tan Seng Hoe

Shen Kuan Chien

Ishii Masato

Sébastien Mougel

Michael Lotissement Les Balcons Du Guiers Stinco

A method for preparing a thin layer comprises a weakening step for forming a weakened zone in a central portion of a donor substrate, the weakened zone not extending into a peripheral portion of the donor substrate; a step of joining the main face of the donor substrate to a receiver substrate to form an assembly to be split; and a step of separating the assembly to be split, the separating step comprising a heat treatment resulting in the freeing of the thin layer from the donor substrate at the central portion thereof only. The method also comprises, after the separating step, a detaching step comprising the treating of the assembly to be split in order to detach the peripheral portion of the donor substrate from the receiver substrate.

Method for preparing a thin layer that includes forming a weakened zone in a central portion of a donor substrate that does not extend into a peripheral portion of the donor substrate and initiating and propagating a splitting wave in the weakened zone that does completely not propagate through the peripheral portion

A process for hydrophilic bonding first and second substrates, comprising: —bringing the first and second substrates into contact to form a bonding interface between main surfaces of the first and second substrates, and—applying a heat treatment to close the bonding interface. The process further comprises, before the step of bringing into contact, depositing, on the main surface of the first and/or second substrate, a bonding layer comprising a non-metallic material that is permeable to dihydrogen and that has, at the temperature of the heat treatment, a yield strength lower than that of at least one of the materials of the first substrate and of the second substrate located at the bonding interface. The layer has a thickness between 1 and 6 nm, and the heat treatment is carried out at a temperature lower than or equal to 900° C., and preferably lower than or equal to 600° C.

Process for hydrophilically bonding substrates

A semiconductor on insulator type structure, which may be used for a front side type imager, successively comprises, from its rear side to its front side, a semiconductor support substrate, an electrically insulating layer and an active layer comprising a monocrystalline semiconductor material. The active layer is made of a semiconductor material having a state of mechanical stress with respect to the support substrate, and the support substrate comprises, on its rear side, a silicon oxide layer, the thickness of the oxide layer being chosen to compensate bow induced by the mechanical stress between the active layer and the support substrate during cooling of the structure after the formation by epitaxy of at least a part of the active layer on the support substrate.

Semiconductor on insulator structure for a front side type imager

A method for transferring a useful layer from a donor substrate to a carrier substrate comprises: a) providing the donor substrate, the donor substrate including a buried weakened plane; b) providing the carrier substrate; c) joining the donor substrate to the carrier substrate to form a bonded structure; and d) annealing the bonded structure in order to increase the level of weakening of the buried weakened plane. A predetermined stress is applied to the buried weakened plane during the annealing for a period of time, the predetermined stress being selected so as to initiate the splitting wave once a given level of weakening has been reached. At the end of the period of time, the given level of weakening having been reached, the predetermined stress causes initiation and self-sustained propagation of the splitting wave along the buried weakened plane, resulting in the useful layer being transferred to the carrier substrate.

Method for transferring a useful layer from a donor substrate onto a support substrate by applying a predetermined stress

A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device

The invention relates to a method for fabricating a pseudo-substrate comprising the steps of providing a single crystal ingot, providing a handle substrate, cutting a thin slice from the single crystal ingot, and attaching the thin slice to the handle substrate to form a pseudo-substrate. According to the invention, the thickness of the thin slice is substantially equal or inferior to a critical thickness below which the slice, if taken alone, is no longer mechanically stable. The invention further relates to a semiconductor structure.

Pseudo-substrate with improved efficiency of usage of single crystal material

The disclosure relates to a hybrid structure for a surface-acoustic-wave device comprising a useful layer of piezoelectric material joined to a carrier substrate having a thermal expansion coefficient lower than that of the useful layer; the hybrid structure comprising an intermediate layer located between the useful layer and the carrier substrate, the intermediate layer being a structured layer formed from at least two different materials comprising a plurality of periodic motifs in the plane of the intermediate layer.

Hybrid structure for a surface acoustic wave device

A method for monitoring a heat treatment applied to a substrate comprising a weakened zone formed by implanting atomic species for splitting the substrate along the weakened zone, the substrate being arranged in a heating chamber, the method comprising recording sound in the interior or in the vicinity of the heating chamber and detecting, in the recording, a sound emitted by the substrate during the splitting thereof along the weakened zone. A device for the heat treatment of a batch of substrates comprises an annealing furnace comprising a heating chamber intended to receive the batch, at least one microphone configured to record sounds in the interior or in the vicinity of the heating chamber, and a processing system configured to detect, in an audio recording produced by the microphone, a sound emitted when a substrate splits.

Method for detecting the splitting of a substrate weakened by implanting atomic species

A system for fracturing a plurality of wafer assemblies, one of the wafers of each assembly comprising a plane of weakness and each assembly comprising a peripheral lateral groove comprises: a cradle for keeping the assemblies of the plurality of assemblies spaced apart and parallel to one another, along a storage axis; a separation device for applying separating forces in the peripheral groove of an assembly arranged in a fracture zone of the separating device, the separating force aiming to separate the wafers of the assembly from one another so as to initiate its fracture at the plane of weakness; and a drive device configured to move along the storage axis of the cradle opposite the separating device so as to successively place an assembly of the cradle in the fracture zone of the separation device.

System for fracturing a plurality of wafer assemblies

Substrates for microelectronic radiofrequency devices may include a substrate comprising a semiconductor material. Trenches may be located in an upper surface of the substrate, at least some of the trenches including a filler material located within the respective trench. A resistivity of the filler material may be 10 kOhms·cm or greater. A piezoelectric material may be located on or above the upper surface of the substrate. Methods of making substrates for microelectronic radiofrequency devices may involve forming trenches in an upper surface of a substrate including a semiconductor material. A filler material may be placed in at least some of the trenches, and a piezoelectric material may be placed on or above the upper surface of the substrate.

Structures for radiofrequency applications and related methods

A method for transferring a useful layer to a carrier substrate, includes the following steps: a) providing a donor substrate including a buried weakened plane; b) providing a carrier substrate; c) joining the donor substrate, by its front face, to the carrier substrate along a bonding interface so as to form a bonded structure; d) annealing the bonded structure in order to apply a weakening thermal budget thereto and to bring the buried weakened plane to a defined level of weakening; and e) initiating a splitting wave in the weakened plane by applying a stress to the bonded structure, the splitting wave self-propagating along the weakened plane to result in the useful layer being transferred to the carrier substrate. The splitting wave is initiated when the bonded structure is subjected to a temperature between 150° C. and 250° C.

Method for transferring a useful layer onto a support substrate

A method for transferring a useful layer to a carrier substrate comprises: joining a front face of a donor substrate to a carrier substrate along a bonding interface to form a bonded structure; annealing the bonded structure to apply a weakening thermal budget thereto and bring a buried weakened plane in the donor substrate to a defined level of weakening, the anneal reaching a maximum hold temperature; and initiating a self-sustained and propagating splitting wave in the buried weakened plane by applying a stress to the bonded structure to lead to the useful layer being transferred to the carrier substrate. The initiation of the splitting wave occurs when the bonded structure experiences a thermal gradient defining a hot region and a cool region of the bonded structure, the stress being applied locally in the cool region, and the hot region experiencing a temperature lower than the maximum hold temperature.

Method for transferring a useful layer to a carrier substrate

A substrate for a front-side type image sensor includes a supporting semiconductor substrate, an electrically insulating layer, and a silicon-germanium semiconductor layer, known as the active layer. The electrically insulating layer includes a stack of dielectric and metallic layers selected such that the reflectivity of the stack in a wavelength range of between 700 nm and 3 μm is greater than the reflectivity of a silicon oxide layer having a thickness equal to that of the stack. The substrate also comprises a silicon layer between the electrically insulating layer and the silicon-germanium active layer. The disclosure also relates to a method for the production of such a substrate.

Substrate for a front-side-type image sensor and method for producing such a substrate

Substrates may include a useful layer affixed to a support substrate. A surface of the useful layer located on a side of the useful layer opposite the support substrate may include a first region and a second region. The first region may have a first surface roughness, may be located proximate to a geometric center of the surface, and may occupy a majority of an area of the surface. The second region may have a second, higher surface roughness, may be located proximate to a periphery of the surface, and may occupy a minority of the area of the surface.

Substrates including useful layers

Growing community of inventors

Grenoble, France

Oleg Kononchuk