Soitec

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Soitec Belgium

Ionut Radu

Mariam G Sadaka

Marcel Broekaart

Oleg Kononchuk

Didier Landru

Eric Desbonnets

Pascal Guenard

Daniel Delprat

Arnaud Castex

Bernard Aspar

Thierry Barge

Jean-Pierre Raskin

Bich-Yen Nguyen

Gweltaz Gaudin

Hugo Biard

Bruno Ghyselen

Fabrice Letertre

Christophe Maleville

Walter Schwarzenbach

Franck Fournel

Jean-Marc Bethoux

Christophe Figuet

Ludovic Ecarnot

Konstantin Bourdelle

Lea Di Cioccio

Joff Derluyn

Stefan Degroote

Julie Widiez

Eric Guiot

Chrystelle Lagahe Blanchard

Carole David

Christelle Veytizou

Yann Sinquin

Christophe Gourdel

Gregory Riou

Chris Werkhoven

Oleg Kononchuck

Christelle Vetizou

Sébastien Vincent

Lucianna Capello

A method for manufacturing a composite structure comprising a thin layer made of monocrystalline silicon carbide arranged on a carrier substrate made of silicon carbide, the method comprising: a) a step of providing a donor substrate made of monocrystalline SiC, the donor substrate comprising a donor layer produced by epitaxial growth on an initial substrate, the donor layer exhibiting a density of crystal defects that is lower than that of the initial substrate; b) a step of ion implantation of light species into the donor layer, in order to form a buried brittle plane delimiting the thin layer between the buried brittle plane and a free face of the donor layer; c) a succession of n steps of formation of carrier layers, with n greater than or equal to 2, the n carrier layers being arranged on the donor layer successively on one another and forming the carrier substrate, each step of formation comprising a chemical vapor deposition, at a temperature of between 400° C. and 1100° C., in order to form a carrier layer made of polycrystalline SiC, the n chemical vapor depositions being carried out at n different temperatures; d) a step of separation along the buried brittle plane, in order to form, on the one hand, a composite structure comprising the thin layer on the carrier substrate and, on the other hand, the remainder of the donor substrate; and e) a step of mechanical and/or chemical treatment(s) of the composite structure.

Method for manufacturing a composite structure comprising a thin layer made of monocrystalline SiC on a carrier substrate made of SiC

A production method for a surface acoustic wave device comprises the following steps: a step of providing a piezoelectric substrate comprising a transducer arranged on the main front face; a step of depositing a dielectric encapsulation layer on the main front face of the piezoelectric substrate and on the transducer; and a step of assembling the dielectric encapsulation layer with the main front face of a support substrate having a coefficient of thermal expansion less than that of the piezoelectric substrate. In additional embodiments, a surface acoustic wave device comprises a layer of piezoelectric material equipped with a transducer on a main front face, arranged on a substrate support of which the coefficient of thermal expansion is less than that of the piezoelectric material. The transducer is arranged in a dielectric encapsulation layer, between the layer of piezoelectric material and the support substrate.

Surface acoustic wave device including transducer in dielectric between a piezoelectric material and a substrate

A method of producing a composite structure comprising a thin layer of monocrystalline silicon carbide arranged on a carrier substrate of silicon carbide comprises: a) a step of provision of an initial substrate of monocrystalline silicon carbide, b) a step of epitaxial growth of a donor layer of monocrystalline silicon carbide on the initial substrate, to form a donor substrate, c) a step of ion implantation of light species into the donor layer, to form a buried brittle plane delimiting the thin layer, d) a step of formation of a carrier substrate of silicon carbide on the free surface of the donor layer, comprising a deposition at a temperature of between 400° C. and 1100° C., e) a step of separation along the buried brittle plane, to form the composite structure and the remainder of the donor substrate, and f) a step of chemical-mechanical treatment(s) of the composite structure.

Method for producing a composite structure comprising a thin layer of monocrystalline sic on a carrier substrate of polycrystalline SiC

The present disclosure relates to a method for mechanically separating layers, in particular in a double layer transfer process. The present disclosure relates more in particular to a method for mechanically separating layers, comprising the steps of providing a semiconductor compound comprising a layer of a handle substrate and an active layer with a front main side and a back main side opposite the front main side, wherein the layer of the handle substrate is attached to the front main side of the active layer, then providing a layer of a carrier substrate onto the back main side of the active layer, and then initiating mechanical separation of the layer of the handle substrate, wherein the layer of the handle substrate and the layer of the carrier substrate are provided with a substantially symmetrical mechanical structure.

Method of mechanical separation for a double layer transfer

A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device

The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.

Heterostructure and method of fabrication

Substrates for microelectronic radiofrequency devices may include a substrate comprising a semiconductor material. Trenches may be located in an upper surface of the substrate, at least some of the trenches including a filler material located within the respective trench. A resistivity of the filler material may be 10 kOhms·cm or greater. A piezoelectric material may be located on or above the upper surface of the substrate. Methods of making substrates for microelectronic radiofrequency devices may involve forming trenches in an upper surface of a substrate including a semiconductor material. A filler material may be placed in at least some of the trenches, and a piezoelectric material may be placed on or above the upper surface of the substrate.

Structures for radiofrequency applications and related methods

Surface acoustic wave device and associated production method

A method for manufacturing a monocrystalline piezoelectric material layer includes providing a donor substrate made of the piezoelectric material, providing a receiving substrate, transferring a so-called 'seed layer' of the donor substrate onto the receiving substrate, and using epitaxy of the piezoelectric material on the seed layer until the desired thickness for the monocrystalline piezoelectric layer is obtained.

Method for manufacturing a monocrystalline piezoelectric layer

Substrates for microelectronic radiofrequency devices may include a substrate comprising a semiconductor material. Trenches may be located in an upper surface of the substrate, at least some of the trenches including a filler material located within the respective trench. A resistivity of the filler material may be 10 kOhms&#xb7;cm or greater. A piezoelectric material may be located on or above the upper surface of the substrate. Methods of making substrates for microelectronic radiofrequency devices may involve forming trenches in an upper surface of a substrate including a semiconductor material. A filler material may be placed in at least some of the trenches, and a piezoelectric material may be placed on or above the upper surface of the substrate.

A method for manufacturing a structure comprising a first substrate comprising at least one electronic component likely to be damaged by a temperature higher than 400&#xb0; C. and a semiconductor layer extending on the first substrate comprises:

Method for manufacturing a structure for forming a tridimensional monolithic integrated circuit

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Crolles, France

Ionut Radu