The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2025

Filed:

Jan. 12, 2021
Applicant:

Soitec, Bernin, FR;

Inventors:

Hugo Biard, Grenoble, FR;

Ionut Radu, Crolles, FR;

Didier Landru, Le Champ-près-Froges, FR;

Assignee:

Soitec, Bernin, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/20 (2006.01); C23C 14/48 (2006.01); C23C 14/58 (2006.01); C23C 16/01 (2006.01); C23C 16/32 (2006.01); C23C 16/56 (2006.01); C30B 25/18 (2006.01); C30B 31/22 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C30B 25/20 (2013.01); C23C 14/48 (2013.01); C23C 14/588 (2013.01); C23C 16/01 (2013.01); C23C 16/325 (2013.01); C23C 16/56 (2013.01); C30B 25/183 (2013.01); C30B 31/22 (2013.01); H01L 21/02002 (2013.01);
Abstract

A method for manufacturing a composite structure comprising a thin layer made of monocrystalline silicon carbide arranged on a carrier substrate made of silicon carbide, the method comprising: a) a step of providing a donor substrate made of monocrystalline SiC, the donor substrate comprising a donor layer produced by epitaxial growth on an initial substrate, the donor layer exhibiting a density of crystal defects that is lower than that of the initial substrate; b) a step of ion implantation of light species into the donor layer, in order to form a buried brittle plane delimiting the thin layer between the buried brittle plane and a free face of the donor layer; c) a succession of n steps of formation of carrier layers, with n greater than or equal to 2, the n carrier layers being arranged on the donor layer successively on one another and forming the carrier substrate, each step of formation comprising a chemical vapor deposition, at a temperature of between 400° C. and 1100° C., in order to form a carrier layer made of polycrystalline SiC, the n chemical vapor depositions being carried out at n different temperatures; d) a step of separation along the buried brittle plane, in order to form, on the one hand, a composite structure comprising the thin layer on the carrier substrate and, on the other hand, the remainder of the donor substrate; and e) a step of mechanical and/or chemical treatment(s) of the composite structure.


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