The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2026
Filed:
Nov. 29, 2021
Method for producing a semiconductor structure comprising an interface region including agglomerates
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Soitec, Bernin, FR;
Gweltaz Gaudin, Crolles, FR;
Ionut Radu, Bernin, FR;
Franck Fournel, Grenoble Cedex, FR;
Julie Widiez, Grenoble Cedex, FR;
Didier Landru, Le Champ-près-Froges, FR;
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;
SOITEC, Bernin, FR;
Abstract
A method for producing a semiconductor structure comprises: a) providing a working layer of a semiconductor material; b) providing a carrier substrate of a semiconductor material; c) depositing a thin film of a semiconductor material different from that or those of the working layer and the carrier substrate on a free face to be joined of the working layer and/or the carrier substrate; d) directly joining the free faces of the working layer and the carrier substrate, e) annealing the joined structure at an elevated temperature to bring about segmentation of the encapsulated thin film and form a semiconductor structure comprising an interface region between the working layer and the carrier substrate, the interface region comprising: —regions of direct contact between the working layer and the carrier substrate; and —agglomerates comprising the semiconductor material of the thin film adjacent the regions of direct contact.