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For the Inventor, By the Inventor

Danbury, CT, United States of America

Ing-Shin Barry Chen

USPTO Granted Patents = 14 

Average Co-Inventor Count = 4.3

ph-index = 7

Forward Citations = 1,469(Granted Patents)


Location History:

  • New Milford, CT (US) (2001 - 2005)
  • Danbury, CT (US) (2006 - 2019)

Company Filing History:

goldMedal11 out of 622 
 
Advanced Technology Materials, Inc.
 patents
silverMedal2 out of 786 
 
Entegris, Inc.
 patents
bronzeMedal1 out of 4 
 
Mst Technology Gmbh
 patents

Years Active: 2001-2019

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14 patents (USPTO):Explore Patents
1. 10288456 - Fluid monitoring apparatus (2019-05-14),
2. 9134146 - Fluid monitoring apparatus (2015-09-15),
3. 8109130 - Apparatus and process for sensing fluoro species in semiconductor processing systems (2012-02-07),
4. 7655887 - Feedback control system and method for maintaining constant resistance operation of electrically heated elements (2010-02-02),
5. 7475588 - Apparatus and process for sensing fluoro species in semiconductor processing systems (2009-01-13),
6. 7370511 - Gas sensor with attenuated drift characteristic (2008-05-13),
7. 7296460 - Apparatus and process for sensing fluoro species in semiconductor processing systems (2007-11-20),
8. 7296458 - Nickel-coated free-standing silicon carbide structure for sensing fluoro or halogen species in semiconductor processing systems, and processes of making and using same (2007-11-20),
9. 7228724 - Apparatus and process for sensing target gas species in semiconductor processing systems (2007-06-12),
10. 7193187 - Feedback control system and method for maintaining constant resistance operation of electrically heated elements (2007-03-20),
11. 7080545 - Apparatus and process for sensing fluoro species in semiconductor processing systems (2006-07-25),
12. 6900498 - Barrier structures for integration of high K oxides with Cu and Al electrodes (2005-05-31),
13. 6692569 - A-SITE-AND/OR B-SITE-MODIFIED PBZRTIO3 MATERIALS AND (PB, SR, CA, BA, MG) (ZR, TI,NB, TA)O3 FILMS HAVING UTILITY IN FERROELECTRIC RANDOM ACCESS MEMORIES AND HIGH PERFORMANCE THIN FILM MICROACTUATORS (2004-02-17),
14. 6312816 - A-site- and/or B-site-modified PbZrTiO3 materials and (Pb, Sr, Ca, Ba, Mg) (Zr, Ti, Nb, Ta)O3 films having utility in ferroelectric random access memories and high performance thin film microactuators (2001-11-06),

Title: The Innovative Journey of Ing-Shin Barry Chen

Introduction: Ing-Shin Barry Chen, a pioneering inventor based in Danbury, CT, is known for her groundbreaking contributions to the field of technology and innovation.

Latest Patents: Chen's latest patents focus on advancements in renewable energy technologies, particularly in the development of solar power systems that are more efficient and cost-effective.

Career Highlights: With a career spanning over two decades, Chen has held key roles in various tech companies, leading research and development teams to create cutting-edge solutions in the renewable energy sector.

Collaborations: Throughout her career, Chen has collaborated with leading universities and research institutions to further her research and bring her innovative ideas to life. Her partnerships have resulted in several successful projects that have had a significant impact on the industry.

Conclusion: Ing-Shin Barry Chen's dedication to innovation and her relentless pursuit of technological advancement continue to inspire the next generation of inventors and researchers in the field of renewable energy.

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