The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2008
Filed:
Mar. 08, 2004
Ing-shin Chen, Danbury, CT (US);
Frank Dimeo, Jr., Danbury, CT (US);
Philip S. H. Chen, Bethel, CT (US);
Jeffrey W. Neuner, Bethel, CT (US);
James Welch, Fairfield, CT (US);
Bryan Hendrix, Danbury, CT (US);
Ing-Shin Chen, Danbury, CT (US);
Frank Dimeo, Jr., Danbury, CT (US);
Philip S. H. Chen, Bethel, CT (US);
Jeffrey W. Neuner, Bethel, CT (US);
James Welch, Fairfield, CT (US);
Bryan Hendrix, Danbury, CT (US);
MST Technology GmbH, , DE;
Abstract
A sensor with an attenuated drift characteristic, including a layer structure in which a sensing layer has a layer of diffusional barrier material on at least one of its faces. The sensor may for example be constituted as a hydrogen gas sensor including a palladium/yttrium layer structure formed on a micro-hotplate base, with a chromium barrier layer between the yttrium layer and the micro-hotplate, and with a tantalum barrier layer between the yttrium layer and an overlying palladium protective layer. The gas sensor is useful for detection of a target gas in environments susceptible to generation or incursion of such gas, and achieves substantial (e.g., >90%) reduction of signal drift from the gas sensor in extended operation, relative to a corresponding gas sensor lacking the diffusional barrier structure of the invention.