Wuppertal, Germany

Ines Pietzonka

This inventor holds 22 USPTO granted patents and 5 published patent applications and 2 EPO patents, primarily in Optoelectronics. Top assignees: Osram Opto Semiconductors Gmbh, Osram Gmbh, Osram Oled Gmbh. Active years: 2007-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ines Pietzonka. Retrieved from https://idiyas.com/inventor/ines-pietzonka

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 22 

% Patents Active = 95.5

 

Average Co-Inventor Count = 4.7

ph-index = 2

Forward Citations = 26(Granted Patents)


Location History:

  • Regensburg, DE (2007 - 2010)
  • Donaustauf, DE (2016 - 2024)

Company Filing History:


Years Active: 2007-2026

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Areas of Expertise:
μ-LED
Optoelectronic Device
Semiconductor Structure
Light-Emitting Diode
AlGaInP-LEDs
Plasma Treatment
Electrical Contact Region
Semiconductor Chips
Radiation-Emitting Element
Charge Carrier Barrier
22 patents (USPTO):Explore Patents

Title: The Innovative Achievements of Ines Pietzonka

Introduction

Ines Pietzonka, an accomplished inventor based in Wuppertal, Germany, has made significant contributions to the field of optoelectronics. With a remarkable portfolio of 18 patents, she has been at the forefront of developing advanced semiconductor structures and devices. Her innovative work has notably influenced the technology used in various applications, showcasing her expertise and dedication to invention.

Latest Patents

Ines Pietzonka's latest patents focus on cutting-edge semiconductor technology. One of her notable inventions is a semiconductor structure that features an n-doped first layer and a p-doped second layer incorporating a first dopant. The active layer, positioned between these two layers, consists of multiple quantum wells. This structure is designed with a hexagonal arrangement of optically active regions set apart from each other. Additionally, the active region incorporates different band gaps, influenced by quantum well intermixing. Another significant patent describes a method for manufacturing semiconductor devices, which includes the layering of materials such as magnesium and zinc, essential for optimizing the performance of the devices.

Career Highlights

Ines Pietzonka has a distinguished career with experience at leading companies, including Osram Opto Semiconductors GmbH and Osram GmbH. Her tenure at these organizations has not only facilitated her growth as an inventor but has also allowed her to work on groundbreaking technologies in the optoelectronic sector.

Collaborations

Throughout her career, Ines has also collaborated with many talented professionals. Notable coworkers include Petrus Sundgren and Andreas Biebersdorf, with whom she has shared insights and expertise, further enhancing her innovative projects.

Conclusion

Ines Pietzonka stands out as a prominent figure in the field of semiconductor inventions. Her extensive experience and inventive prowess have led to numerous patents that enhance the functionality and efficiency of optoelectronic devices. As she continues to push the boundaries of technology, her contributions are likely to shape the future of the industry for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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