The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2025
Filed:
Mar. 26, 2020
Osram Opto Semiconductors Gmbh, Regensburg, DE;
Andreas Biebersdorf, Regensburg, DE;
Stefan Illek, Donaustauf, DE;
Felix Feix, Jena, DE;
Christoph Klemp, Regensburg, DE;
Ines Pietzonka, Donaustauf, DE;
Petrus Sundgren, Lappersdorf, DE;
Christian Berger, Marburg, DE;
Ana Kanevce, Stuttgart, DE;
OSRAM Opto Semiconductors GmbH, Regensburg, DE;
Abstract
A semiconductor structure comprises an n-doped first layer, a p-doped second layer doped with a first dopant, and an active layer disposed between the n-doped first layer and the p-doped second layer and having at least one quantum well. The active layer of the semiconductor structure is divided into a plurality of first optically active regions, at least one second region, and at least one third region. Here, the plurality of first optically active regions are arranged in a hexagonal pattern spaced apart from each other. The at least one quantum well in the active region comprises a larger band gap in the at least one second region than in the plurality of first optically active regions and the at least one third region, the band gap being modified, in particular, by quantum well intermixing. The at least one second region encloses the plurality of first optically active regions.