Osram Opto Semiconductors Gmbh

Osram Gmbh

Osram Oled Gmbh

Ines Pietzonka

Petrus Sundgren

Andreas Biebersdorf

Christoph Klemp

Stefan Illek

Felix Feix

Ana Kanevce

Christian Berger

Jens Ebbecke

Hubert Halbritter

Ralph Wirth

Laura Kreiner

Wilhelm Stein

Philipp Kreuter

Walter Wegleiter

Andreas Ploessl

Norbert Linder

Peter Stauss

Gudrun Diepold

Thomas Schwarz

Peter Brick

Siegfried Herrmann

Erwin Lang

Karl Engl

Reiner Windisch

Karsten Diekmann

Marc Philippens

Adrian Stefan Avramescu

Rainer Butendeich

Michael Brandl

Ivar Tångring

Dimitri Dini

Jean-Jacques Drolet

Andreas Leber

Julia Stolz

Xue Wang

Bernd Mayer

Nicole Heitzer

Marie Assmann

Eva-Maria Rummel

Andreas Rausch

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

μ-LED, μ-LED device, display and method for the same

Embodiments provide a method for treating a semiconductor wafer comprising a set of aluminum gallium indium phosphide light emitting diodes (AlGaInP-LEDs) to increase a light generating efficiency of the AlGaInP-LEDs, wherein each AlGaInP-LED includes a core active layer for light generation sandwiched between two outer layers, the core active layer having a central light generating area and a peripheral edge surrounding the central light generating area, wherein the method includes treating the peripheral edge of the core active layer of each AlGaInP-LED with a laser beam thereby increasing a minimum band gap in each peripheral edge to such an extent that, during operation of the AlGaInP-LED, an electron-hole recombination is essentially confined to the central light generating area.

Method of laser treatment of a semiconductor wafer comprising AlGaInP-LEDs to increase their light generating efficiency

A semiconductor structure comprises an n-doped first layer, a p-doped second layer doped with a first dopant, and an active layer disposed between the n-doped first layer and the p-doped second layer and having at least one quantum well. The active layer of the semiconductor structure is divided into a plurality of first optically active regions, at least one second region, and at least one third region. Here, the plurality of first optically active regions are arranged in a hexagonal pattern spaced apart from each other. The at least one quantum well in the active region comprises a larger band gap in the at least one second region than in the plurality of first optically active regions and the at least one third region, the band gap being modified, in particular, by quantum well intermixing. The at least one second region encloses the plurality of first optically active regions.

Optoelectronic component, semiconductor structure and method

In an embodiment a method for manufacturing a semiconductor device include providing a growth substrate, depositing an n-doped first layer, depositing an active region on the n-doped first layer, depositing a second layer onto the active region, depositing magnesium (Mg) in the second layer and subsequently to depositing Mg, depositing zinc (Zn) in the second layer such that a concentration of Zn in the second layer decreases from a first value to a second value in a first area of the second layer adjacent to the active region, the first area being in a range of 5 nm to 200 nm.

Method for manufacturing a semiconductor device and optoelectronic device

In an embodiment a method for producing optoelectronic semiconductor chips includes A) growing an AlInGaAsP semiconductor layer sequence on a growth substrate along a growth direction, wherein the semiconductor layer sequence includes an active zone for radiation generation, and wherein the active zone is composed of a plurality of alternating quantum well layers and barrier layers, B) generating a structured masking layer, C) regionally intermixing the quantum well layers and the barrier layers by applying an intermixing auxiliary through openings of the masking layer into the active zone in at least one intermixing region and D) singulating the semiconductor layer sequence into sub-regions for the semiconductor chips, wherein the barrier layers in A) are grown from [(AlGa)In]Pwith x≥0.5, and wherein the quantum well layers are grown in A) from [(AlGa)In]Pwith o<a≤

Method for producing optoelectronic semiconductor chips, and optoelectronic semiconductor chip

The invention relates to a method for producing a semiconductor component comprising performing a plasma treatment of an exposed surface of a semiconductor material with halogens, and carrying out a diffusion method with dopants on the exposed surface.

Method for producing a semiconductor component comprising performing a plasma treatment, and semiconductor component

The invention relates to various aspects of a &#x3bc;-LED or a &#x3bc;-LED array for augmented reality or lighting applications, in particular in the automotive field. The &#x3bc;-LED is characterized by particularly small dimensions in the range of a few &#x3bc;m.

&#x3bc;-LED, &#x3bc;-LED device, display and method for the same

A method of aligning semiconductor chips in a medium includes providing an electrically insulating liquid medium; providing semiconductor chips; forming a suspension with the medium and the semiconductor chips; exposing the semiconductor chips to electromagnetic radiation that generates free charge carriers in the semiconductor chips; arranging the suspension in an electric field in which the semiconductor chips are aligned along the electric field; and curing the medium after aligning the semiconductor chips.

Method of aligning semiconductor chips, method of arranging semiconductor chips, device that produces a semiconductor component, and semiconductor component

The invention relates to an optoelectronic component (), comprising a carrier () and a plurality of nanorods (), which are arranged on the carrier (), wherein the nanorods () each comprise an active zone (). Furthermore, the optoelectronic component () comprises a potting compound (), which is arranged on the carrier () and at least partially embeds the nanorods (), and a structured metallization (), which laterally surrounds the nanorods (), wherein the nanorods () extend in a longitudinal direction N, the structured metallization () extends in a longitudinal direction M, and the longitudinal direction M of the structured metallization () extends transversely to the longitudinal direction N of the nanorods ().

Optoelectronic component and method for producing an optoelectronic component

An optoelectronic semiconductor body has a substrate that includes a strained layer that is applied to the substrate in a first epitaxy step. The strained layer includes at least one recess formed vertically in the strained layer. In a second epitaxy step, a further layer applied to the strained layer. The further layer fills the at least one recess and covers the strained layer at least in some areas.

Optoelectronic semiconductor body and method for producing an optoelectronic semiconductor body

An optoelectronic semiconductor body includes a semiconductor layer sequence having an active region that generates radiation, a first barrier region and a second barrier region, wherein the active region is arranged between the first barrier region and the second barrier region; and at least one charge carrier barrier layer is arranged in the first barrier region, said at least one charge carrier barrier layer being tensile-strained.

III-V compound semiconductor-based-light-emitting diode device with embedded charge carrier barrier

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Wuppertal, Germany

Ines Pietzonka