The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2025
Filed:
May. 19, 2020
Osram Opto Semiconductors Gmbh, Regensburg, DE;
Philipp Kreuter, Teublitz, DE;
Andreas Biebersdorf, Regensburg, DE;
Christoph Klemp, Regensburg, DE;
Jens Ebbecke, Rohr in Niederbayern OT Helchenbach, DE;
Ines Pietzonka, Donaustauf, DE;
Petrus Sundgren, Lappersdorf, DE;
OSRAM Opto Semiconductors GmbH, Regensburg, DE;
Abstract
In an embodiment a method for manufacturing a semiconductor device include providing a growth substrate, depositing an n-doped first layer, depositing an active region on the n-doped first layer, depositing a second layer onto the active region, depositing magnesium (Mg) in the second layer and subsequently to depositing Mg, depositing zinc (Zn) in the second layer such that a concentration of Zn in the second layer decreases from a first value to a second value in a first area of the second layer adjacent to the active region, the first area being in a range of 5 nm to 200 nm.