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For the Inventor, By the Inventor

Portland, OR, United States of America

Il-Seok Son

USPTO Granted Patents = 11 

Average Co-Inventor Count = 4.7

ph-index = 3

Forward Citations = 18(Granted Patents)


Company Filing History:

goldMedal11 out of 54,664 
 
Intel Corporation
 patents

Years Active: 2016-2024

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11 patents (USPTO):
1. 12100762 - Wrap-around source/drain method of making contacts for backside metals (2024-09-24),
2. 12100761 - Wrap-around source/drain method of making contacts for backside metals (2024-09-24),
3. 11594452 - Techniques for revealing a backside of an integrated circuit device, and associated configurations (2023-02-28),
4. 11264493 - Wrap-around source/drain method of making contacts for backside metals (2022-03-01),
5. 10896847 - Techniques for revealing a backside of an integrated circuit device, and associated configurations (2021-01-19),
6. 10797139 - Methods of forming backside self-aligned vias and structures formed thereby (2020-10-06),
7. 10490449 - Techniques for revealing a backside of an integrated circuit device, and associated configurations (2019-11-26),
8. 10367070 - Methods of forming backside self-aligned vias and structures formed thereby (2019-07-30),
9. 10236282 - Partial layer transfer system and method (2019-03-19),
10. 9721898 - Methods of forming under device interconnect structures (2017-08-01),
11. 9490201 - Methods of forming under device interconnect structures (2016-11-08),

Title: The Innovations of Il-Seok Son: A Pioneering Inventor in Semiconductor Technology

Introduction: Il-Seok Son is a distinguished inventor based in Portland, OR, whose contributions to the field of semiconductor technology are notable. With a remarkable portfolio of 11 patents, Son continually pushes the boundaries of innovation, enhancing the functionality and performance of electronic devices.

Latest Patents: Among his latest inventions is the "Wrap-around source/drain method of making contacts for backside metals." This innovative apparatus consists of a circuit structure with a device layer housing a plurality of devices on one side and an opposite second side featuring an electrically conductive contact. The method includes forming a transistor device with channels between the source and drain, ensuring efficient interconnectivity and performance enhancements in semiconductor devices.

Career Highlights: Throughout his career, Il-Seok Son has made significant advances in the semiconductor industry. He is currently employed at Intel Corporation, where his work primarily focuses on developing cutting-edge technologies that drive performance in advanced electronic systems. His expertise and commitment to innovation have positioned him as a key player in his field.

Collaborations: In addition to his contributions, Il-Seok Son collaborates with esteemed colleagues such as Patrick R. Morrow and Kimin Jun. These collaborations have fostered a productive environment where innovative ideas can flourish, leading to groundbreaking developments in semiconductor technology.

Conclusion: Il-Seok Son represents the spirit of innovation in the technology sector. His patents and ongoing work at Intel Corporation reinforce his commitment to advancing semiconductor technology and improving electronic device performance. With each new invention, he continues to inspire future generations of inventors and engineers in the realm of electronics.

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