IDiyas

For the Inventor, By the Inventor

Kyunggi-do, South Korea

Hyung-Shin Kwon

USPTO Granted Patents = 15

Average Co-Inventor Count = 2.2

ph-index = 4

Forward Citations = 109(Granted Patents)


Location History:

  • Seoul, KR (2003)
  • Osan-si, KR (2004 - 2007)
  • Kyunggi-do, KR (2003 - 2008)
  • Gyeonggi-do, KR (2006 - 2010)
  • Hwaseong-si, KR (2013)
  • Seongnam-si, KR (2015 - 2019)

Company Filing History:

goldMedal15 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2003-2019

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15 patents (USPTO):
1. 10431320 - Semiconductor memory device, method of testing the same and method of operating the same (2019-10-01),
2. 9053963 - Multiple well bias memory (2015-06-09),
3. 8558347 - Semiconductor devices and methods of manufacturing the same (2013-10-15),
4. 8415225 - Methods of manufacturing semiconductor devices (2013-04-09),
5. 7696048 - Method of improving gate resistance in a memory array (2010-04-13),
6. 7385260 - Semiconductor device having silicide thin film and method of forming the same (2008-06-10),
7. 7348231 - Methods of fabricating semiconductor devices having insulating layers with differing compressive stresses (2008-03-25),
8. 7312144 - Unitary interconnection structures integral with a dielectric layer and fabrication methods thereof (2007-12-25),
9. 7172944 - Method of fabricating a semiconductor device having an elevated source/drain (2007-02-06),
10. 7151031 - Methods of fabricating semiconductor devices having gate insulating layers with differing thicknesses (2006-12-19),
11. 7002223 - Semiconductor device having elevated source/drain (2006-02-21),
12. 6806180 - Unitary interconnection structures integral with a dielectric layer (2004-10-19),
13. 6767814 - Semiconductor device having silicide thin film and method of forming the same (2004-07-27),
14. 6635539 - Method for fabricating a MOS transistor using a self-aligned silicide technique (2003-10-21),
15. 6551887 - Method of forming a spacer (2003-04-22),

Title: Innovations by Inventor Hyung-Shin Kwon

Introduction

Hyung-Shin Kwon is a prominent inventor based in Kyunggi-do, South Korea. With a remarkable portfolio of 15 patents, he has made significant contributions to the field of semiconductor technology, particularly in memory devices. His work at Samsung Electronics Co., Ltd. has positioned him as a key player in the realm of innovative electronic solutions.

Latest Patents

Among his latest patents, Kwon has developed a **Semiconductor Memory Device**, along with associated methods for testing and operating the device. This method involves writing data to multiple memory cells in a designated memory block, applying distinct driving voltages to different groups of word lines, and determining the functionality of memory cells by reading data from the first group.

Additionally, he has introduced a **Multiple Well Bias Memory** device, which consists of a semiconductor substrate featuring both a first well with a memory cell and a second well with a sense amplifier. The unique aspect of this invention is the differing doping concentrations and voltage biases applied to each well, enhancing the efficiency of data sensing and amplification.

Career Highlights

Hyung-Shin Kwon's career at Samsung Electronics Co., Ltd. has been marked by his dedication to advancing semiconductor technology. His innovative approaches have not only improved device functionalities but have also paved the way for more efficient memory applications that cater to the growing demands of modern electronics.

Collaborations

Throughout his career, Kwon has collaborated with esteemed colleagues such as Sung-Bong Kim and Soon-Moon Jung. These collaborations have led to the creation of groundbreaking technologies in semiconductor design and testing methodologies, strengthening their impact in the industry.

Conclusion

In summary, Hyung-Shin Kwon stands out as a brilliant inventor whose work continues to redefine the landscape of semiconductor technology. With a focus on enhancing memory devices through innovative testing and operational methods, Kwon's contributions are invaluable to the field, reflecting a commitment to excellence and advancement in electronics.

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