The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2015
Filed:
Jul. 10, 2013
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Chung-ki Lee, Seoul, KR;
Hong-sun Hwang, Suwon-si, KR;
Hyung-shin Kwon, Seongnam-si, KR;
Jong-hyoung Lim, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A multiple well bias memory device that includes a semiconductor substrate; a first well of a first conductivity type formed in the semiconductor substrate and having a memory cell formed therein; and a second well of the first conductivity type formed in the semiconductor substrate and having formed therein a sense amplifier configured to sense and amplify data from the memory cell. The first and second wells have different doping concentrations and are biased to first and second voltages, respectively. The first voltage being lower than the second voltage.