The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2019

Filed:

Dec. 30, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Hyung-Shin Kwon, Seongnam-si, KR;

Jong-Hyoung Lim, Seoul, KR;

Chang-Soo Lee, Suwon-si, KR;

Chung-Ki Lee, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/12 (2006.01); G11C 8/08 (2006.01); G11C 16/34 (2006.01); G11C 29/08 (2006.01); G11C 29/10 (2006.01); G11C 29/18 (2006.01); G11C 7/12 (2006.01);
U.S. Cl.
CPC ...
G11C 29/12005 (2013.01); G11C 7/12 (2013.01); G11C 8/08 (2013.01); G11C 16/3427 (2013.01); G11C 29/08 (2013.01); G11C 29/10 (2013.01); G11C 29/12 (2013.01); G11C 29/18 (2013.01); G11C 2029/1202 (2013.01);
Abstract

A method of testing a semiconductor memory device is provided. Data is written to a plurality of memory cells disposed in a memory cell block of the semiconductor memory device. A first driving voltage is applied to a first group of word lines. A second driving voltage is applied to a second group of word lines. Each word line of the first group of the word lines is interposed between two neighboring word lines of the second group of the word lines. The first driving voltage has a voltage level different from that of the second driving voltage. The data is read from first memory cells coupled to the first group to determine whether each of the first memory cells is defective.


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