The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2008
Filed:
Apr. 21, 2004
Hyung-shin Kwon, Kyunggi-do, KR;
Joon-yong Joo, Seoul, KR;
Kwang-ok Koh, Kyunggi-do, KR;
Sung-bong Kim, Kyunggi-do, KR;
Hyung-Shin Kwon, Kyunggi-do, KR;
Joon-Yong Joo, Seoul, KR;
Kwang-Ok Koh, Kyunggi-do, KR;
Sung-Bong Kim, Kyunggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
The present invention provides a semiconductor device having a silicide thin film and method of forming the same. A semiconductor device comprises a gate insulation layer formed on an active region of a semiconductor substrate. A gate electrode is formed on the gate insulation layer. An impurity region is formed in the active region adjacent the gate electrode. A silicide thin film such as a cobalt silicide thin film is formed to a thickness of less than approximately 200 Å in the impurity region.