Location History:
- Gwangju-si, KR (2008 - 2010)
- Gwangju, KR (2009 - 2016)
Company Filing History:
6 out of 475 
5 out of 131,906 
3 out of 11,026 
Years Active: 2008-2016
Title: Innovator Hyun-Sang Hwang: Pioneering Advances in Resistance-Variable Memory Technology
Introduction: Hyun-Sang Hwang is a prominent inventor based in Gwangju, South Korea, known for his significant contributions to the field of memory devices. With an impressive portfolio of 11 patents, Hwang has become a key figure in advancing technology that enhances data storage efficiency and reliability.
Latest Patents: Hwang's recent innovations include two groundbreaking patents. The first is a "Resistance-variable memory device including carbide-based solid electrolyte membrane and manufacturing method thereof." This invention features a resistance-variable memory device that utilizes a carbide-based solid electrolyte membrane, providing stable memory at elevated temperatures. The device comprises a lower electrode, the solid electrolyte membrane, and an upper electrode. The manufacturing process involves forming these key components on a substrate.
The second notable patent is for a "Resistive RAM, method for fabricating the same, and method for driving the same." This resistive random access memory (ReRAM) comprises a first electrode, a threshold switching layer, a resistance change layer, and a second electrode. The invention emphasizes the use of a stoichiometric transition oxide for the threshold switching layer while employing a non-stoichiometric transition metal oxide for the resistance change layer.
Career Highlights: Hwang's exemplary career includes pivotal roles at esteemed organizations such as the Gwangju Institute of Science and Technology and Samsung Electronics Co., Ltd. These positions have allowed him to apply his innovative thinking in real-world applications, contributing to advancements in memory technology.
Collaborations: Throughout his career, Hwang has collaborated with distinguished colleagues, including Sang-hun Jeon and Chung-woo Kim. These partnerships have fostered an environment of creativity and shared expertise, leading to groundbreaking inventions in the memory domain.
Conclusion: Hyun-Sang Hwang's dedication to innovation in resistance-variable memory technology makes him a significant figure in the field of electronics. With a solid track record of successful patents and collaborations, he continues to influence the future of data storage solutions through his pioneering work. His contributions prove invaluable as industries seek ever-more efficient technologies to support the growing demands of data management.