The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2008
Filed:
Jan. 18, 2006
Sang-hun Jeon, Seoul, KR;
Sung-kyu Choi, Gyeonggi-do, KR;
Chung-woo Kim, Gyeonggi-do, KR;
Hyun-sang Hwang, Gwangju-si, KR;
Sung-ho Park, Gyeonggi-do, KR;
Jeong-hee Han, Gyeonggi-do, KR;
Sang-moo Choi, Gwangju-si, KR;
Sang-Hun Jeon, Seoul, KR;
Sung-Kyu Choi, Gyeonggi-do, KR;
Chung-Woo Kim, Gyeonggi-do, KR;
Hyun-Sang Hwang, Gwangju-si, KR;
Sung-Ho Park, Gyeonggi-do, KR;
Jeong-Hee Han, Gyeonggi-do, KR;
Sang-Moo Choi, Gwangju-si, KR;
Samsung Electronics, Co, Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor memory device a first dopant area and a second dopant area, the first dopant area and the second dopant area disposed in a semiconductor substrate, an insulating layer disposed in contact with the first dopant area and the second dopant area, the insulating layer including a material selected from the group consisting of Hf, Zr, Y, and Ln, and a gate electrode layer disposed on the insulating layer.