The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2009
Filed:
Jan. 17, 2006
Sang-hun Jeon, Seoul, KR;
Chung-woo Kim, Gyeonggi-do, KR;
Hyun-sang Hwang, Gwangju-si, KR;
Sung-kweon Baek, Gwangju-si, KR;
Sang-moo Choi, Gwangju-si, KR;
Sang-Hun Jeon, Seoul, KR;
Chung-Woo Kim, Gyeonggi-do, KR;
Hyun-Sang Hwang, Gwangju-si, KR;
Sung-Kweon Baek, Gwangju-si, KR;
Sang-Moo Choi, Gwangju-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor memory device includes a first dopant area and a second dopant area in a semiconductor substrate, the first dopant area and the second dopant area doped with one selected from the group consisting of Sb, Ga, and Bi. The semiconductor memory device includes an insulating layer disposed in contact with the first dopant area and the second dopant area, and a gate electrode layer disposed in contact with the insulating layer.