The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Dec. 18, 2012
Applicant:
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Inventors:
Assignees:
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Gwangju Institute of Science and Technology, Gwangju, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 11/56 (2006.01); H01L 45/00 (2006.01); G11C 11/21 (2006.01);
U.S. Cl.
CPC ...
G11C 11/21 (2013.01); G11C 2213/15 (2013.01); G11C 13/0007 (2013.01); G11C 2213/32 (2013.01); G11C 11/5685 (2013.01); H01L 45/147 (2013.01); H01L 45/04 (2013.01); H01L 45/1233 (2013.01); G11C 13/0069 (2013.01); H01L 45/08 (2013.01); G11C 2213/31 (2013.01); H01L 45/16 (2013.01); H01L 45/146 (2013.01);
Abstract
Hybrid resistive memory devices and methods of operating and manufacturing the same, include at least two resistive memory units. At least one of the at least two resistive memory units is a resistive memory unit configured to operate in a long-term plasticity state.