The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2013

Filed:

Aug. 28, 2009
Applicant:

Hyun-sang Hwang, Gwangju, KR;

Inventor:

Hyun-Sang Hwang, Gwangju, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided are a resistance change memory device with a three-dimensional structure, a resistance change memory device array, an electronic product, and a manufacturing method therefor. The device array includes a plurality of first directional data lines which are arranged on a substrate in parallel. A conductive pillar is positioned between sidewalls of the first directional data lines, which face each other. A resistance change material film is positioned between the sidewall of the conductive pillar and the sidewall of the data lines that are adjacent to the sidewall of the conductive pillar.


Find Patent Forward Citations

Hwang, Hyun-Sang. (2013). Resistance change memory device with three-dimensional structure, and device array, electronic product and manufacturing method therefor (U.S. Patent No. 8546861). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8546861

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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