The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2009
Filed:
Jan. 28, 2008
Applicants:
Hyun-sang Hwang, Gwangju, KR;
Ho-kyung Park, Gwangju, KR;
Man Jang, Gwangju, KR;
Min-seok JO, Gwangju, KR;
Inventors:
Hyun-Sang Hwang, Gwangju, KR;
Ho-Kyung Park, Gwangju, KR;
Man Jang, Gwangju, KR;
Min-Seok Jo, Gwangju, KR;
Assignee:
Poongsan Microtec Co., Ltd., , KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of fabricating a flash memory is provided. The method includes forming a tunneling insulating film, a charge storage film, and a blocking insulating film on a semiconductor substrate; performing High Temperature (HT) anneal for the resultant semiconductor substrate; and performing Low Temperature (LT) wet vapor anneal for the resultant semiconductor substrate.