The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2008
Filed:
Oct. 07, 2005
Applicants:
Sang-hun Jeon, Seoul, KR;
Chung-woo Kim, Suwon-si, KR;
Hyun-sang Hwang, Gwangju-si, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract
Memory devices and methods of manufacturing the same are provided. Memory devices may include a substrate, a source region and a drain region and a gate structure. The gate structure may be in contact with the source and drain regions, and may include a barrier layer. The barrier layer may be formed of at least two layers. The at least two layers may have different bandgap energies.