Company Filing History:

16 out of 164,108

International Business Machines Corporation

patents

3 out of 962

Chartered Semiconductor Manufacturing Ltd (corporation)

patents

1 out of 131,214

Samsung Electronics Co., Ltd.

patents

4. 1 out of 14,705

Infineon Technologies Ag

patents

where one patent can have more than one assignee

Years Active: 1988-2014

where 'Filed Patents' based on already Granted Patents

16 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 8643119 - Substantially L-shaped silicide for contact (2014-02-04),

2. 8268698 - Formation of improved SOI substrates using bulk semiconductor wafers (2012-09-18),

3. 8039331 - Opto-thermal annealing methods for forming metal gate and fully silicided gate-field effect transistors (2011-10-18),

4. 7932158 - Formation of improved SOI substrates using bulk semiconductor wafers (2011-04-26),

5. 7785950 - Dual stress memory technique method and related structure (2010-08-31),

6. 7772676 - Strained semiconductor device and method of making same (2010-08-10),

7. 7452784 - Formation of improved SOI substrates using bulk semiconductor wafers (2008-11-18),

8. 7442619 - Method of forming substantially L-shaped silicide contact for a semiconductor device (2008-10-28),

9. 7410852 - Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors (2008-08-12),

10. 7307323 - Structure to use an etch resistant liner on transistor gate structure to achieve high device performance (2007-12-11),

11. 7064027 - Method and structure to use an etch resistant liner on transistor gate structure to achieve high device performance (2006-06-20),

12. 6884734 - Vapor phase etch trim structure with top etch blocking layer (2005-04-26),

13. 6656375 - Selective nitride: oxide anisotropic etch process (2003-12-02),

14. 6369434 - Nitrogen co-implantation to form shallow junction-extensions of p-type metal oxide semiconductor field effect transistors (2002-04-09),

15. 6030541 - Process for defining a pattern using an anti-reflective coating and (2000-02-29),

Title: The Innovative Journey of Inventor Hung Y Ng

Introduction: Hung Y Ng, a talented inventor based in New Milford, NJ (US), has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents: Hung Y Ng's latest patents showcase his ingenuity and forward-thinking approach to innovation, with a focus on cutting-edge technologies in the digital realm.

Career Highlights: Throughout his illustrious career, Hung Y Ng has consistently pushed the boundaries of what is possible, earning a reputation as a visionary in the world of inventions. His dedication to creating solutions that improve lives has led to numerous successful patents and innovations.

Collaborations: Hung Y Ng has collaborated with leading tech companies and research institutions to bring his ideas to life. His ability to work effectively in multidisciplinary teams has resulted in the development of groundbreaking technologies that have revolutionized the industry.

Conclusion: In conclusion, Hung Y Ng's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of inventions. His remarkable contributions continue to inspire future generations of inventors to think outside the box and create a better tomorrow.

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1 patent (EPO):

Please report any incorrect information to support@idiyas.com

Inventor’s Patent Attorneys refers to legal professionals with specialized expertise in representing inventors throughout the patent process. These attorneys assist inventors in navigating the complexities of patent law, including filing patent applications, conducting patent searches, and protecting intellectual property rights. They play a crucial role in helping inventors secure patents for their innovative creations.