The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2003
Filed:
Jan. 28, 1998
Michael D. Armacost, Wallkill, NY (US);
David M. Dobuzinsky, Hopewell Junction, NY (US);
John C. Malinowski, Jericho, VT (US);
Hung Y. Ng, New Milford, NJ (US);
Richard S. Wise, Beacon, NY (US);
Chienfan Yu, Highland Mills, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An anisotropic etching process for a nitride layer of a substrate, the process comprising using an etchant gas which comprises a hydrogen-rich fluorohydrocarbon, an oxidant and a carbon source. The hydrogen-rich fluorohydrocarbon is preferably one of CH F or CH F , the carbon source is preferably one of CO or CO, and the oxidant is preferably O . The fluorohydrocarbon is preferably present in the gas at approximately 7%-35% by volume, the oxidant is preferably present in the gas at approximately 1%-35% by volume, and the carbon source is preferably present in the gas at approximately 30%-92%.