Taipei, Taiwan

Hung-Chang Liao

This inventor holds 6 USPTO granted patents and 1 published patent application. Top assignees: Nan Ya Technology Corporation, Inotera Memories, Inc.. Active years: 2000-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hung-Chang Liao. Retrieved from https://idiyas.com/inventor/hung-chang-liao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 6 

% Patents Active = 100.0

Average Co-Inventor Count = 5.3

ph-index = 1

Forward Citations = 4(Granted Patents)


Location History:

  • Taipei Hsien, TW (2000)
  • Taoyuan County, TW (2011)
  • Taoyuan, TW (2011)
  • Taipei, TW (2005 - 2015)

Company Filing History:


Years Active: 2000-2015

Loading Chart...
6 patents (USPTO):Explore Patents

Title: Innovations by Inventor Hung-Chang Liao

Introduction

Hung-Chang Liao is a prominent inventor based in Taipei, Taiwan, known for his significant contributions to the field of semiconductor technology. With a total of six patents under his name, Liao has demonstrated a keen ability to develop innovative solutions that advance modern electronics.

Latest Patents

Among his latest patents, Liao has developed a sophisticated semiconductor structure that includes multiple buried gates integrated within a substrate. This invention features a first source and a second source, along with an interlayer dielectric layer that covers the buried gates and substrate. A core dual damascene plug is also part of the design, which comprises a first plug, a second plug, and an insulating slot positioned between them to ensure electrical insulation. The first and second plugs connect with the respective sources through the interlayer dielectric layer, enhancing operational efficiency.

Additionally, Liao has made strides in DRAM technology with his patent for a DRAM that incorporates a dopant stop layer. This innovation includes a substrate, a trench-type transistor, and a capacitor that connects electrically to the transistor. The trench-type transistor is equipped with a gate structure embedded in the substrate, flanked by source and drain doping regions. Underneath the source doping region lies a boron doping region, which contains a dopant stop layer made from elements like carbon, silicon, germanium, tin, chlorine, fluorine, or bromine, furthering the advancement of memory technology.

Career Highlights

Liao's career includes key roles at leading technology firms such as Nan Ya Technology Corporation and Inotera Memories, Inc. His work in such esteemed companies has solidified his reputation as a skilled inventor in the semiconductor sector.

Collaborations

Throughout his career, Hung-Chang Liao has collaborated with notable peers, including Chung-Yuan Lee and Shian-Jyh Lin. These professional relationships have facilitated the exchange of innovative ideas and have significantly contributed to his accomplishments in inventing cutting-edge technologies.

Conclusion

Hung-Chang Liao's innovative spirit and dedication to advancing semiconductor technology have earned him recognition within the industry. His recent patents reflect a commitment to enhancing electronic components, paving the way for future developments in memory and processing technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…