The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2011
Filed:
Jul. 30, 2008
Shian-jyh Lin, Taoyuan County, TW;
Hung-chang Liao, Taoyuan County, TW;
Meng-hung Chen, Taoyuan County, TW;
Chung-yuan Lee, Taoyuan County, TW;
Pei-ing Lee, Taoyuan County, TW;
Shian-Jyh Lin, Taoyuan County, TW;
Hung-Chang Liao, Taoyuan County, TW;
Meng-Hung Chen, Taoyuan County, TW;
Chung-Yuan Lee, Taoyuan County, TW;
Pei-Ing Lee, Taoyuan County, TW;
Nanya Technology Corporation, Taoyuan, TW;
Abstract
A memory device is provided. The memory device includes a substrate, a trench having an upper portion and a lower portion formed in the substrate, a trench capacitor formed in the lower portion of the trench, a collar dielectric layer formed on a sidewall of the trench capacitor and extending away from a top surface of the substrate, a first doping region formed on a side of the upper portion of the trench in the substrate for serving as source/drain, a conductive layer formed in the trench and electrically connected to the first doping region, a top dielectric layer formed on conductive layer, a gate formed on the top dielectric layer, an epitaxy layer formed on both sides of the gate and on the substrate and a second doping area formed on a top of the epitaxy layer for serving as source/drain.