The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2015
Filed:
Mar. 15, 2013
Inotera Memories, Inc., Taoyuan, TW;
Tzung-Han Lee, Taipei, TW;
Yaw-Wen Hu, Taoyuan County, TW;
Hung-Chang Liao, Taipei, TW;
Chung-Yuan Lee, Taoyuan County, TW;
Hsu Chiang, New Taipei, TW;
Sheng-Hsiung Wu, Taipei, TW;
INOTERA MEMORIES, INC., Hwa-Ya Technology Park Kueishan, Taoyuan, TW;
Abstract
A semiconductor structure includes multiple buried gates which are disposed in a substrate and have a first source and a second source, an interlayer dielectric layer covering the multiple buried gates and the substrate as well as a core dual damascene plug including a first plug, a second plug and an insulating slot. The insulating slot is disposed between the first plug and the second plug so that the first plug and the second plug are mutually electrically insulated. The first plug and the second plug respectively penetrate the interlayer dielectric layer and are respectively electrically connected to the first source and the second source.