The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2011
Filed:
Jul. 22, 2008
Shian-jyh Lin, Taoyuan, TW;
Ming-cheng Chang, Taoyuan, TW;
Neng Tai Shih, Taoyuan, TW;
Hung-chang Liao, Taoyuan, TW;
Shian-Jyh Lin, Taoyuan, TW;
Ming-Cheng Chang, Taoyuan, TW;
Neng Tai Shih, Taoyuan, TW;
Hung-Chang Liao, Taoyuan, TW;
Nanya Technology Corp., Taoyuan, TW;
Abstract
A trench-type semiconductor device structure is disclosed. The structure includes a semiconductor substrate, a gate dielectric layer and a substrate channel structure. The semiconductor substrate includes a trench having an upper portion and a lower portion. The upper portion includes a conductive layer formed therein. The lower portion includes a trench capacitor formed therein. The gate dielectric layer is located between the semiconductor substrate and the conductive layer. The substrate channel structure with openings, adjacent to the trench, is electrically connected to the semiconductor substrate via the openings.