The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2013
Filed:
Sep. 14, 2011
Chia-ming Yang, Kaohsiung, TW;
Yao-hsien Wang, New Taipei, TW;
Chen-kang Wei, Kaohsiung, TW;
Chien-chi Lee, Taipei, TW;
Ming Yean, Taoyuan County, TW;
Yi-wei Chuang, Taipei, TW;
Hsiao-lung Chiang, Taoyuan County, TW;
Hung-chang Liao, Taipei, TW;
Chung-yuan Lee, Tao-Yuan, TW;
Ming-chi Chao, New Taipei, TW;
Chia-Ming Yang, Kaohsiung, TW;
Yao-Hsien Wang, New Taipei, TW;
Chen-Kang Wei, Kaohsiung, TW;
Chien-Chi Lee, Taipei, TW;
Ming Yean, Taoyuan County, TW;
Yi-Wei Chuang, Taipei, TW;
Hsiao-Lung Chiang, Taoyuan County, TW;
Hung-Chang Liao, Taipei, TW;
Chung-Yuan Lee, Tao-Yuan, TW;
Ming-Chi Chao, New Taipei, TW;
Inotera Memories, Inc., Hwa-Ya Technology Park Kueishan, Taoyuan, TW;
Abstract
A DRAM with dopant stop layer includes a substrate, a trench-type transistor and a capacitor electrically connected to the trench-type transistor. The trench-type transistor includes a gate structure embedded in the substrate. A source doping region and a drain doping region are disposed in the substrate at two sides of the gate structure. A boron doping region is disposed under the source doping region. A dopant stop layer is disposed within the boron doping region or below the boron doping region. The dopant stop layer includes a dopant selected from the group consisting of C, Si, Ge, Sn, Cl, F and Br.