Company Filing History:
Years Active: 2013
Title: The Innovative Contributions of Ming Yean
Introduction
Ming Yean is a notable inventor based in Taoyuan County, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of dynamic random-access memory (DRAM) systems. His work has implications for the efficiency and performance of electronic devices.
Latest Patents
Ming Yean holds a patent for a DRAM with a dopant stop layer and the method of fabricating the same. This innovative DRAM design includes a substrate, a trench-type transistor, and a capacitor that is electrically connected to the trench-type transistor. The trench-type transistor features a gate structure embedded in the substrate, with source and drain doping regions positioned on either side of the gate structure. Additionally, a boron doping region is located beneath the source doping region, and a dopant stop layer is integrated within or below the boron doping region. The dopant stop layer is composed of a dopant selected from a group that includes carbon (C), silicon (Si), germanium (Ge), tin (Sn), chlorine (Cl), fluorine (F), and bromine (Br). This patent showcases his innovative approach to enhancing DRAM technology.
Career Highlights
Ming Yean is currently employed at Inotera Memories, Inc., where he continues to push the boundaries of memory technology. His work at Inotera has positioned him as a key player in the semiconductor industry, contributing to advancements that are critical for modern electronics.
Collaborations
Ming Yean has collaborated with several talented individuals in his field, including Chia-Ming Yang and Yao-Hsien Wang. These collaborations have fostered an environment of innovation and have led to the development of cutting-edge technologies in memory systems.
Conclusion
Ming Yean's contributions to the field of DRAM technology exemplify the importance of innovation in the semiconductor industry. His patent and ongoing work at Inotera Memories, Inc. highlight his role as a significant inventor in advancing electronic memory solutions.