Company Filing History:
Years Active: 2013
Title: Yao-Hsien Wang: Innovator in DRAM Technology
Introduction
Yao-Hsien Wang is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in dynamic random-access memory (DRAM) systems. His innovative work has led to the development of advanced materials and methods that enhance the performance and efficiency of DRAM devices.
Latest Patents
Wang holds a patent for a DRAM with a dopant stop layer, which includes a substrate, a trench-type transistor, and a capacitor that is electrically connected to the trench-type transistor. The trench-type transistor features a gate structure embedded in the substrate. The design incorporates a source doping region and a drain doping region located on either side of the gate structure. Additionally, a boron doping region is situated beneath the source doping region, and a dopant stop layer is positioned within or below the boron doping region. This dopant stop layer consists of a dopant selected from a group that includes carbon (C), silicon (Si), germanium (Ge), tin (Sn), chlorine (Cl), fluorine (F), and bromine (Br). Wang's innovative approach has the potential to improve the reliability and performance of DRAM technology.
Career Highlights
Yao-Hsien Wang is currently employed at Inotera Memories, Inc., a leading company in the semiconductor industry. His work at Inotera has allowed him to collaborate with other talented professionals in the field, contributing to the advancement of memory technologies.
Collaborations
Some of Wang's notable coworkers include Chia-Ming Yang and Chen-Kang Wei. Their collaborative efforts have fostered an environment of innovation and creativity, leading to significant advancements in semiconductor technology.
Conclusion
Yao-Hsien Wang's contributions to DRAM technology exemplify the impact of innovative thinking in the semiconductor industry. His patent for a DRAM with a dopant stop layer showcases his commitment to enhancing memory performance and reliability. Wang's work continues to influence the future of semiconductor technology.