Taipei, Taiwan

Yi-Wei Chuang

USPTO Granted Patents = 1 

Average Co-Inventor Count = 10.0

ph-index = 1


Company Filing History:


Years Active: 2013

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1 patent (USPTO):Explore Patents

Title: Yi-Wei Chuang: Innovator in DRAM Technology

Introduction

Yi-Wei Chuang is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in dynamic random-access memory (DRAM) systems. His innovative work has led to the development of a unique patent that enhances the performance and efficiency of DRAM devices.

Latest Patents

Yi-Wei Chuang holds a patent for a DRAM with a dopant stop layer and the method of fabricating the same. This invention includes a substrate, a trench-type transistor, and a capacitor that is electrically connected to the trench-type transistor. The trench-type transistor features a gate structure embedded in the substrate. Additionally, a source doping region and a drain doping region are positioned in the substrate on either side of the gate structure. A boron doping region is located beneath the source doping region, and a dopant stop layer is integrated within or below the boron doping region. The dopant stop layer comprises a dopant selected from a group that includes carbon (C), silicon (Si), germanium (Ge), tin (Sn), chlorine (Cl), fluorine (F), and bromine (Br). This innovative approach aims to improve the overall functionality of DRAM devices.

Career Highlights

Yi-Wei Chuang is currently employed at Inotera Memories, Inc., where he continues to push the boundaries of memory technology. His work has been instrumental in advancing the capabilities of DRAM, making it more efficient and reliable for various applications.

Collaborations

Some of his notable coworkers include Chia-Ming Yang and Yao-Hsien Wang. Their collaborative efforts contribute to the innovative environment at Inotera Memories, Inc., fostering advancements in semiconductor technology.

Conclusion

Yi-Wei Chuang's contributions to DRAM technology exemplify the impact of innovative thinking in the semiconductor industry. His patent for a DRAM with a dopant stop layer showcases his commitment to enhancing memory performance. Through his work at Inotera Memories, Inc., he continues to influence the future of memory technology.

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