Inotera Memories, Inc.

Yi-Wei Chuang

Chung-Yuan Lee

Chia-Ming Yang

Hung-Chang Liao

Chien-Chi Lee

Ming-Chi Chao

Chen-Kang Wei

Yao-Hsien Wang

Ming Yean

Hsiao-Lung Chiang

A DRAM with dopant stop layer includes a substrate, a trench-type transistor and a capacitor electrically connected to the trench-type transistor. The trench-type transistor includes a gate structure embedded in the substrate. A source doping region and a drain doping region are disposed in the substrate at two sides of the gate structure. A boron doping region is disposed under the source doping region. A dopant stop layer is disposed within the boron doping region or below the boron doping region. The dopant stop layer includes a dopant selected from the group consisting of C, Si, Ge, Sn, Cl, F and Br.

DRAM with dopant stop layer and method of fabricating the same

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Taipei, Taiwan

Yi-Wei Chuang