logo

For the Inventor, By the Inventor

Hsinchu, Taiwan

Hsiao-Wen Zan

This inventor holds 34 USPTO granted patents and 15 published patent applications, primarily in Organic Semiconductor Devices. Top assignees: E Ink Holdings Inc., National Yang Ming Chiao Tung University, Corning Incorporated. Active years: 2002-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hsiao-Wen Zan. Retrieved from https://idiyas.com/inventor/hsiao-wen-zan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 34 

% Patents Active = 94.1

Average Co-Inventor Count = 4.5

ph-index = 3

Forward Citations = 85(Granted Patents)


Location History:

  • Jhudong Township, Hsinchu County, TW (2014)
  • Hsinchu County, TW (2014)
  • Hsinchu, TW (2002 - 2024)

Company Filing History:

goldMedal18 out of 591 
 
E Ink Holdings Inc.
 patents
silverMedal14 out of 1,244 
 
National Yang Ming Chiao Tung University
 patents
bronzeMedal5 out of 7,469 
 
Corning Incorporated
 patents
4. 2 out of 7,269 
 
United Microelectronics Corp.
 patents
where one patent can have more than one assignee

Years Active: 2002-2026

Loading Chart...
Areas of Expertise:
Gas Sensor
Organic Thin Film Transistor
Vertical Type Sensor
High Current OTFT
Transistor Manufacturing
Sensing Element
Field Effect Transistor
Memory Structure
Display Panel
Electro-Optical Component
Metal Oxide Semiconductor
Nanowires
34 patents (USPTO):Explore Patents
1. 12656304 - Gas sensor based on thiophene-based high performance organic semiconducting materials with large surface area vertical device design (2026-06-16),
2. 12253489 - Gas sensor (2025-03-18),
3. 12138070 - Gas sensor (2024-11-12),
4. 12058933 - High current OTFT devices with vertical designed structure and donor-acceptor based organic semiconductor materials (2024-08-06),
5. 11737361 - High current OTFT devices with vertical designed structure and donor-acceptor based organic semiconductor materials (2023-08-22),
6. 11635400 - Gas sensor (2023-04-25),
7. 11499937 - Gas sensor (2022-11-15),
8. 11437587 - High current OTFT devices with vertical designed structure and donor-acceptor based organic semiconductor materials (2022-09-06),
9. 11391685 - Sensitive device and method of forming the same (2022-07-19),
10. 11226400 - Proximity sensor and operation method thereof (2022-01-18),
11. 11165033 - Active device (2021-11-02),
12. 11114570 - Memory structure and manufacturing method thereof (2021-09-07),
13. 11041822 - Sensing element (2021-06-22),
14. 10879362 - Transistor (2020-12-29),
15. 10326088 - Organic thin film transistor and manufacturing method thereof (2019-06-18),

Title: The Innovative Journey of Hsiao-Wen Zan

Introduction:

Hsiao-Wen Zan, a pioneering inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents:

Zan's latest patents showcase his commitment to pushing the boundaries of technological advancement, with a focus on areas such as artificial intelligence, renewable energy, and biotechnology.

Career Highlights:

Throughout his illustrious career, Zan has been instrumental in developing cutting-edge solutions that have revolutionized industries worldwide. His keen insight and inventive spirit have led to the creation of patents that have set new standards in the tech world.

Collaborations:

Zan's collaborative efforts with leading research institutions, universities, and tech companies have been instrumental in bringing his visionary ideas to life. By working hand in hand with experts in various fields, he has been able to harness the power of collective innovation.

Conclusion:

In conclusion, Hsiao-Wen Zan stands as a beacon of innovation, inspiring the next generation of inventors to dream big and think outside the box. His remarkable contributions to the world of technology continue to shape the way we live and work, leaving an indelible mark on the landscape of innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…