The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2021
Filed:
Apr. 12, 2020
E Ink Holdings Inc., Hsinchu, TW;
Hsiao-Wen Zan, Hsinchu, TW;
Chuang-Chuang Tsai, Hsinchu, TW;
Ching-Fu Lin, Hsinchu, TW;
Zong-Xuan Li, Hsinchu, TW;
Wei-Tsung Chen, Hsinchu, TW;
E Ink Holdings Inc., Hsinchu, TW;
Abstract
A memory structure includes a substrate, a gate electrode, a first isolation layer, a thin metal layer, indium gallium zinc oxide (IGZO) particles, a second isolation layer, an IGZO channel layer, and a source/drain electrode. The gate electrode is located on the substrate. The first isolation layer is located on the gate electrode. The thin metal layer is located on the first isolation layer, and has metal particles. The IGZO particles are located on the metal particles. The second isolation layer is located on the IGZO particles. The IGZO channel layer is located on the second isolation layer. The source/drain electrode is located on the IGZO channel layer.