Hsinchu, Taiwan

Zong-Xuan Li

This inventor holds 4 USPTO granted patents. Top assignee: E Ink Holdings Inc.. Active years: 2019-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zong-Xuan Li. Retrieved from https://idiyas.com/inventor/zong-xuan-li

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.7

ph-index = 1


Company Filing History:


Years Active: 2019-2022

Loading Chart...
4 patents (USPTO):Explore Patents

Title: Innovations of Zong-Xuan Li

Introduction

Zong-Xuan Li is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of technology, particularly in the development of advanced sensors and memory structures. With a total of four patents to his name, Li's work showcases his innovative approach to solving complex engineering challenges.

Latest Patents

One of Zong-Xuan Li's latest patents is a proximity sensor and operation method. This invention includes a substrate, a light source, a finger electrode, an active layer, and a transparent electrode layer. The substrate features opposite top and bottom surfaces, with the light source facing the bottom surface. The finger electrode is positioned on the top surface and consists of finger portions with gaps between adjacent portions. The active layer covers the finger electrode and is located in the gaps. When the light source emits light, it passes through the gaps, the active layer, and the transparent electrode layer onto a reflective surface. The reflected light is then received by the active layer, enhancing the sensor's functionality.

Another notable patent by Li is a memory structure and manufacturing method. This invention comprises a substrate, a gate electrode, a first isolation layer, a thin metal layer, indium gallium zinc oxide (IGZO) particles, a second isolation layer, an IGZO channel layer, and a source/drain electrode. The gate electrode is situated on the substrate, with the

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…