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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11635400 B1

PDFFull Text
Date of Patent:
Apr. 25, 2023

Filed:

Aug. 19, 2020

Gas sensor

Applicant:

National Chiao Tung University, Hsinchu, TW;

Inventors:

Hsiao-Wen Zan, Hsinchu, TW;

Hsin-Fei Meng, Hsinchu, TW;

Chien-Lung Wang, Hsinchu, TW;

Sheng-Fu Horng, Hsinchu, TW;

Hsuan Chu, Hsinchu, TW;

Wei-Lun Chen, Hsinchu, TW;

Ting-Hsuan Huang, Hsinchu, TW;

Pin-Hsuan Li, Hsinchu, TW;

Assignee:

NATIONAL CHIAO TUNG UNIVERSITY, Hsinchu, TW;

Attorney:

Lando & Anastasi, LLP

Primary Examiner:

Benjamin R Schmitt

Int. Cl.
CPC ...
G01N 27/12 (2006.01); G01N 27/04 (2006.01);
U.S. Cl.
CPC ...
G01N 27/125 (2013.01); G01N 27/04 (2013.01); G01N 27/041 (2013.01); G01N 27/121 (2013.01);
Abstract

A gas sensor for sensing a gas in a humid environment includes a first electrode layer, a second electrode layer that is spaced apart from the first electrode layer, and a gas sensing layer that electrically interconnects the first electrode layer and the second electrode layer. The gas sensing layer is made of a hygroscopic electrically insulating material.

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Zan, Hsiao-Wen. (2023). Gas sensor (U.S. Patent No. 11635400). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11635400

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