Taipei, Taiwan

Hsiao-Lan Yang


Average Co-Inventor Count = 2.1

ph-index = 3

Forward Citations = 26(Granted Patents)


Company Filing History:


Years Active: 2014-2023

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9 patents (USPTO):Explore Patents

Title: Hsiao-Lan Yang: Innovator in Semiconductor Technology

Introduction

Hsiao-Lan Yang is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of nine patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

One of Hsiao-Lan Yang's latest patents is for a high-density capacitor implemented using FinFET technology. This invention features a first and a second gate structure that extend in a first direction, with conductive contacts that are strategically positioned to optimize electrical coupling. Another notable patent involves reconfiguring layout and sizing for transistor components, which aims to simultaneously optimize logic and non-logic devices. This innovation includes various fin structures and gate dimensions that enhance the overall functionality of semiconductor devices.

Career Highlights

Hsiao-Lan Yang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His expertise and innovative approach have positioned him as a key player in advancing semiconductor technology.

Collaborations

Hsiao-Lan Yang has collaborated with notable colleagues, including Jiefeng Lin and Chih-Yung Lin. Their combined efforts contribute to the ongoing development of cutting-edge semiconductor solutions.

Conclusion

Hsiao-Lan Yang's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the industry. His work continues to pave the way for advancements in electronic devices and systems.

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