The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Feb. 25, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventor:
Hsiao-Lan Yang, Taipei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 23/525 (2006.01); H01L 27/115 (2006.01); H01L 21/768 (2006.01); H01L 27/10 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823475 (2013.01); H01L 23/5252 (2013.01); H01L 27/115 (2013.01); H01L 21/823431 (2013.01); H01L 21/76895 (2013.01); H01L 27/101 (2013.01);
Abstract
A device includes a substrate, isolation regions at a surface of the substrate, and a semiconductor region over a top surface of the isolation regions. A conductive feature is disposed over the top surface of the isolation regions, wherein the conductive feature is adjacent to the semiconductor region. A dielectric material is disposed between the conductive feature and the semiconductor region. The dielectric material, the conductive feature, and the semiconductor region form an anti-fuse.