The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2020

Filed:

Jan. 03, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Jiefeng Jeff Lin, Hsinchu, TW;

Hsiao-Lan Yang, Taipei, TW;

Chih-Yung Lin, Hsinchu County, TW;

Chung-Hui Chen, Hsinchu, TW;

Hao-Chieh Chan, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 23/5228 (2013.01); H01L 28/20 (2013.01); H01L 28/60 (2013.01);
Abstract

Semiconductor structures are provided. A semiconductor structure includes a substrate, a conductive plate of a first metal layer over the substrate, a first resistor material of a resistor layer over the conductive plate, a high-K material formed between the first resistor material and the conductive plate, a first conductive line of a second metal layer over the resistor layer, and a first via formed between the first conductive line and the first resistor material. The conductive plate, the first resistor material and the high-K material form a capacitor between the first and second metal layers. The first distance between the first resistor material and the conductive plate is less than the second distance between the first resistor material and the first conductive line.


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