Company Filing History:

8 out of 2,034

Sharp Laboratories of America, Inc

Lsi Logic Corporation

patents

Years Active: 2002-2013

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13 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8552560 - Alternate pad structures/passivation inegration schemes to reduce or eliminate IMC cracking in post wire bonded dies during Cu/Low-K BEOL processing (2013-10-08),

2. 8076779 - Reduction of macro level stresses in copper/low-K wafers (2011-12-13),

3. 7531442 - Eliminate IMC cracking in post wirebonded dies: macro level stress reduction by modifying dielectric/metal film stack in be layers during Cu/Low-K processing (2009-05-12),

4. 7205673 - Reduce or eliminate IMC cracking in post wire bonded dies by doping aluminum used in bond pads during Cu/Low-k BEOL processing (2007-04-17),

5. 6833572 - Electrode materials with improved hydrogen degradation resistance (2004-12-21),

6. 6815342 - Low resistance metal interconnect lines and a process for fabricating them (2004-11-09),

7. 6759252 - Method and device using titanium doped aluminum oxide for passivation of ferroelectric materials (2004-07-06),

8. 6716645 - MFMOS capacitors with high dielectric constant materials (2004-04-06),

9. 6630702 - Method of using titanium doped aluminum oxide for passivation of ferroelectric materials and devices including the same (2003-10-07),

10. 6555874 - Method of fabricating high performance SiGe heterojunction bipolar transistor BiCMOS on a silicon-on-insulator substrate (2003-04-29),

11. 6541385 - Method for plasma etching of Ir-Ta-O electrode and for post-etch cleaning (2003-04-01),

12. 6503763 - Method of making MFMOS capacitors with high dielectric constant materials (2003-01-07),

13. 6440752 - Electrode materials with improved hydrogen degradation resistance and fabrication method (2002-08-27),

Title: Innovations by Inventor Hong Ying

Introduction

Hong Ying is a prominent inventor based in San Jose, California. He has made significant contributions to the field of semiconductor technology, particularly in the area of pad structures and passivation integration schemes. With a total of 13 patents to his name, his work has been influential in reducing or eliminating intermetallic compound (IMC) cracking in post wire bonded dies during copper and low-k back-end-of-line (BEOL) processing.

Latest Patents

Hong Ying's latest patents focus on innovative pad structures and passivation integration schemes. One of his notable inventions involves alternate pad structures designed to reduce stress gradients and improve the contact surface between aluminum pads and gold wire bonds. This includes a pad structure with recessed areas formed in a single aluminum pad, which can be supported by an oxide mesa. Another design features a single recessed pad area above a copper pad and trench/via pads, while yet another structure staggers the aluminum and copper pads for enhanced performance. Additionally, he has developed a passivation scheme that effectively reduces macro-level stresses in copper and low-k wafers, utilizing a thick barrier layer between aluminum and copper layers.

Career Highlights

Throughout his career, Hong Ying has worked with notable companies such as Sharp Laboratories of America and LSI Corporation. His expertise in semiconductor technology has allowed him to develop innovative solutions that address critical challenges in the industry.

Collaborations

Hong Ying has collaborated with esteemed colleagues, including Sheng Teng Hsu and Fengyan Zhang. Their combined efforts have contributed to advancements in semiconductor technology and have furthered the understanding of pad structures and passivation schemes.

Conclusion

In summary, Hong Ying is a distinguished inventor whose work has significantly impacted the semiconductor industry. His innovative patents and collaborations demonstrate his commitment to advancing technology and addressing industry challenges.

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