The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2004
Filed:
Dec. 12, 2002
Applicant:
Inventors:
Tingkai Li, Vancouver, WA (US);
Sheng Teng Hsu, Camas, WA (US);
Hong Ying, San Jose, CA (US);
Bruce D. Ulrich, Beaverton, OR (US);
Yanjun Ma, Vancouver, WA (US);
Assignee:
Sharp Laboratories of America, Inc., Camas, WA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
A MFMOS one transistor memory structure for ferroelectric non-volatile memory devices includes a high dielectric constant material such as ZrO , HfO , Y O , or La O , or the like, or mixtures thereof, to reduce the operation voltage and to increase the memory window and reliability of the device.