The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2002
Filed:
Mar. 26, 2001
Fengyan Zhang, Vancouver, WA (US);
Tingkai Li, Vancouver, WA (US);
Hong Ying, San Jose, CA (US);
Yoshi Ono, Camas, WA (US);
Sheng Teng Hsu, Camas, WA (US);
Sharp Laboratories of America, Inc., Camas, WA (US);
Abstract
An electrode for use in a ferroelectric device includes a bottom electrode; a ferroelectric layer; and a top electrode formed on the ferroelectric layer and formed of a combination of metals, including a first metal take from the group of metals consisting of platinum and iridium, and a second metal taken from the group of metals consisting of aluminum and titanium; wherein the top electrode acts as a passivation layer and wherein the top electrode remains conductive following high temperature annealing in a hydrogen atmosphere. A method of forming a hydrogen-resistant electrode in a ferroelectric device includes forming a bottom electrode; forming a ferroelectric layer on the bottom electrode; depositing a top electrode on the ferroelectric layer; including depositing, simultaneously, a first metal taken from the group of metals consisting of platinum and iridium; and a second metal taken from the group of metals consisting of aluminum and titanium; and forming a passivation layer by annealing the structure in an oxygen atmosphere to form an oxide passivation layer on the top electrode.