IDiyas

For the Inventor, By the Inventor

Gyeonggi-do, South Korea

Hong-Sik Jeong

USPTO Granted Patents = 13 

Average Co-Inventor Count = 4.0

ph-index = 5

Forward Citations = 368(Granted Patents)


Location History:

  • Kyunggi-do, KR (2001)
  • Kyungki-do, KR (2004 - 2008)
  • Sungnam-si, KR (2007 - 2010)
  • Gyeonggi-do, KR (2007 - 2011)

Company Filing History:

goldMedal13 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2001-2011

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13 patents (USPTO):
1. 8043924 - Methods of forming phase-change memory units, and methods of manufacturing phase-change memory devices using the same (2011-10-25),
2. 7916538 - Memory device employing NVRAM and flash memory cells (2011-03-29),
3. 7843741 - Memory devices with selective pre-write verification and methods of operation thereof (2010-11-30),
4. 7700430 - Phase-changeable memory device and method of manufacturing the same (2010-04-20),
5. 7569401 - Magnetic random access memory cells having split subdigit lines having cladding layers thereon and methods of fabricating the same (2009-08-04),
6. 7462523 - Semiconductor memory device and method for manufacturing the same (2008-12-09),
7. 7300888 - Methods of manufacturing integrated circuit devices having an encapsulated insulation layer (2007-11-27),
8. 7295463 - Phase-changeable memory device and method of manufacturing the same (2007-11-13),
9. 7164598 - Methods of operating magnetic random access memory device using spin injection and related devices (2007-01-16),
10. 6900546 - Semiconductor memory device and method for manufacturing the same (2005-05-31),
11. 6815300 - Method for manufacturing semiconductor device having increased effective channel length (2004-11-09),
12. 6720276 - Methods of forming spin on glass layers by curing remaining portions thereof (2004-04-13),
13. 6177320 - Method for forming a self aligned contact in a semiconductor device (2001-01-23),

Title: **Innovator Spotlight: Hong-Sik Jeong**

Introduction:

Hong-Sik Jeong is a notable inventor based in Gyeonggi-do, South Korea, recognized for his significant contributions to memory technology. With an impressive portfolio of 13 patents, Jeong has played a pivotal role in advancing the field of phase-change memory devices, making strides in both efficiency and performance.

Latest Patents:

Among his latest innovations are methods of forming phase-change memory units and methods of manufacturing phase-change memory devices. One of his key patents details a method for forming a phase-change memory unit, which involves creating a conductive layer on a substrate containing a trench. This layer is then planarized to expose the substrate, allowing for the formation of a first electrode. The advancement includes a spacer that partially covers the first electrode, followed by the application of a phase-change material layer. This innovative design aids in reducing reset and set currents in the memory units while mitigating the deterioration of the phase-change material layer.

Another noteworthy patent focuses on a memory device that employs non-volatile random-access memory (NVRAM) alongside flash memory cells. This device features a memory cell array that contains both NAND flash cell portions and NVRAM cell portions, arranged in a way that optimizes connectivity and functionality across respective rows. These innovative designs have significant implications for enhancing memory device performance.

Career Highlights:

Hong-Sik Jeong's career has been marked by his tenure at Samsung Electronics Co., Ltd., where he contributes to cutting-edge research and development in memory technology. His work is instrumental in shaping the future of semiconductor memory solutions.

Collaborations:

In his role, Jeong collaborates with talented colleagues such as Gi-Tae Jeong and Ki-nam Kim. Together, they push the boundaries of innovation and technology within their field, fostering a collaborative environment that promotes groundbreaking achievements in memory device technology.

Conclusion:

Innovator Hong-Sik Jeong exemplifies the spirit of innovation through his extensive patent portfolio and collaborations. His work at Samsung Electronics Co., Ltd. continues to influence the evolution of memory technologies, showcasing the impact of dedicated inventors in shaping the future of electronic devices.

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